Datasheet > NE68033-T1B-A

NE68033-T1B-A

更新时间： 2024-01-28 19:39:25

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
20页	625K
描述
TRANSISTOR,BJT,NPN,10V V(BR)CEO,35MA I(C),SOT-23

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技术参数
数据手册

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NE68033-T1B-A 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.82
最大集电极电流 (IC)：	0.035 A	配置：	Single
最小直流电流增益 (hFE)：	50	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.2 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

NE68033-T1B-A 数据手册

NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

NE680

SERIES

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz

• LOW NOISE FIGURE:

1.7 dB at 2 GHz

2.6 dB at 4 GHz

• HIGH ASSOCIATED GAIN:

12.5 dB at 2 GHz

8.0 dB at 4 GHz

• EXCELLENT LOW VOLTAGE

LOW CURRENT PERFORMANCE

35 (MICRO-X)

00 (CHIP)

DESCRIPTION

NEC's NE680 series of NPN epitaxial silicon transistors is de-

signed for low noise, high gain and low cost applications. Both

the chip and micro-x versions are suitable for applications up

to 6 GHz. The NE680 die is also available in six different low

cost plastic surface mount package styles. The NE680's high

fT makes it ideal for low voltage/low current applications, down

to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is

35 mA. For higher current applications see the NE681 se-

19 (3 PIN ULTRA

SUPER MINI MOLD)

18 (SOT 343 STYLE)

30 (SOT 323

33 (SOT 23 STYLE)

NE68018

NOISE FIGURE & ASSOCIATED GAIN

vs. FREQUENCY

6V, 5 mA

3V, 5 mA

39 (SOT 143 STYLE)

39R (SOT 143R STYLE)

2.5

2.0

1.5

1.0

300 500

1000

2000

3000

Frequency, f (GHz)

California Eastern Laboratories

12 3 4 5 6 7...20

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