Datasheet > NE677M04

NE677M04

更新时间： 2024-11-15 03:46:43

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
8页	171K
描述
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

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中文翻译

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NE677M04 数据手册

NEC's MEDIUM POWER

NPN SILICON HIGH FREQUENCY

TRANSISTOR

NE677M04

FEATURES

•

HIGH GAIN BANDWIDTH:

fT = 15 GHz

HIGH OUTPUT POWER:

P-1dB = 15 dBm at 1.8 GHz

HIGH LINEAR GAIN:

GL = 15.5 dB at 1.8 GHz

2.05±0.1

1.25±0.1

NEW LOW PROFILE M04 PACKAGE:

SOT-343 footprint, with a height of only 0.59 mm

Flat lead style for better RF performance

DESCRIPTION

NEC's NE677M04 is fabricated using NEC's HFT3 wafer

process. Withatransitionfrequencyof15GHz, theNE677M04

isusableinapplicationsfrom100MHzto3GHz.TheNE677M04

provides P1dB of 15 dBm, even with low voltage and low

current, making this device an excellent choice for the driver

stage for mobile or fixed wireless applications.

+0.01

-0.05

(leads 1, 3 and ,4)

+0.30

NEC's NE677M04 is housed in NEC's new low profile/flat lead

style "M04" package

PIN CONNECTIONS

1. Emitter

2. Collector

3. Emitter

4. Base

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

EIAJ³REGISTRATION NUMBER

NE677M04

M04

2SC5751

SYMBOLS

ICBO

PARAMETERS AND CONDITIONS

Collector Cutoff Current at VCB = 5V, IE = 0

UNITS

MIN

TYP

MAX

100

150

IEBO

Emitter Cutoff Current at VEB = 1 V, IC = 0

DC Current¹Gain at VCE = 3 V, IC = 20 mA

hFE

120

P1dB

Output Power at 1 dB compression point at VCE = 2.8 V, ICQ = 8 mA,

f = 1.8 GHz, Pin = 1 dBm

dBm

15.0

MAG

|S21E|²

ηc

Linear Gain at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz, Pin = -10 dBm

Maximum Available Gain⁴at VCE = 3 V, IC = 20 mA, f = 2 GHz

Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz

dBm

15.5

16.0

13.5

10.0

Collector Efficiency at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz,

Pin = 1 dBm

Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz, Zs =ZOPT

Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz

GHz

1.7

2.5

Cre

Reverse Transfer Capacitance²at VCB = 3 V, IC = 0, f = 1 MHz

0.22

0.50

Notes:

1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the

guard pin of capacitance meter.

3. Electronic Industrail Association of Japan

K ²- 1 ).

|S21

|S12

MAG =

California Eastern Laboratories

12 3 4 5 6 7 8

中文翻译

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与NE677M04相关器件

型号	品牌	获取价格	描述	数据表
NE677M04-T2	ETC	获取价格	NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE677M04-T2-A	CEL	获取价格	MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE678M04	CEL	获取价格	MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE678M04	NEC	获取价格	MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE678M04-T2	NEC	获取价格	MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE678M04-T2-A	CEL	获取价格	MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE680	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68000	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68018	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN, PLASTIC,
NE68018-T1	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

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