Datasheet > NE677M04-T2

NE677M04-T2

更新时间： 2024-02-26 20:34:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
7页	64K
描述
NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

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中文翻译

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技术参数
数据手册

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NE677M04-T2 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.83
Is Samacsys：	N	最大集电极电流 (IC)：	0.05 A
配置：	Single	最小直流电流增益 (hFE)：	75
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.205 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

NE677M04-T2 数据手册

NEC's MEDIUM POWER

NPN SILICON HIGH FREQUENCY

TRANSISTOR

NE677M04

FEATURES

•

HIGH GAIN BANDWIDTH:

fT = 15 GHz

HIGH OUTPUT POWER:

P-1dB = 15 dBm at 1.8 GHz

HIGH LINEAR GAIN:

GL = 15.5 dB at 1.8 GHz

2.05±0.1

1.25±0.1

NEW LOW PROFILE M04 PACKAGE:

SOT-343 footprint, with a height of only 0.59 mm

Flat lead style for better RF performance

DESCRIPTION

NEC's NE677M04 is fabricated using NEC's HFT3 wafer

process. Withatransitionfrequencyof15GHz, theNE677M04

isusableinapplicationsfrom100MHzto3GHz.TheNE677M04

provides P1dB of 15 dBm, even with low voltage and low

current, making this device an excellent choice for the driver

stage for mobile or fixed wireless applications.

+0.01

-0.05

(leads 1, 3 and ,4)

+0.30

NEC's NE677M04 is housed in NEC's new low profile/flat lead

style "M04" package

PIN CONNECTIONS

1. Emitter

2. Collector

3. Emitter

4. Base

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

EIAJ³REGISTRATION NUMBER

NE677M04

M04

2SC5751

SYMBOLS

ICBO

PARAMETERS AND CONDITIONS

Collector Cutoff Current at VCB = 5V, IE = 0

UNITS

MIN

TYP

MAX

100

150

IEBO

Emitter Cutoff Current at VEB = 1 V, IC = 0

DC Current¹Gain at VCE = 3 V, IC = 20 mA

hFE

120

P1dB

Output Power at 1 dB compression point at VCE = 2.8 V, ICQ = 8 mA,

f = 1.8 GHz, Pin = 1 dBm

dBm

15.0

MAG

|S21E|²

ηc

Linear Gain at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz, Pin = -10 dBm

Maximum Available Gain⁴at VCE = 3 V, IC = 20 mA, f = 2 GHz

Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz

dBm

15.5

16.0

13.5

10.0

Collector Efficiency at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz,

Pin = 1 dBm

Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz, Zs =ZOPT

Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz

GHz

1.7

2.5

Cre

Reverse Transfer Capacitance²at VCB = 3 V, IC = 0, f = 1 MHz

0.22

0.50

Notes:

1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the

guard pin of capacitance meter.

3. Electronic Industrail Association of Japan

K ²- 1 ).

|S21

|S12

(K ±

MAG =

California Eastern Laboratories

12 3 4 5 6 7

中文翻译

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与NE677M04-T2相关器件

型号	品牌	获取价格	描述	数据表
NE677M04-T2-A	CEL	获取价格	MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE678M04	CEL	获取价格	MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE678M04	NEC	获取价格	MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE678M04-T2	NEC	获取价格	MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE678M04-T2-A	CEL	获取价格	MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE680	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68000	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68018	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN, PLASTIC,
NE68018-T1	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68018-T1-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,10V V(BR)CEO,35MA I(C),SOT-343

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