Datasheet > NE678M04-T2-A

NE678M04-T2-A

更新时间： 2024-11-15 03:46:43

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
8页	171K
描述
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

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NE678M04-T2-A 数据手册

NEC's MEDIUM POWER NPN

SILICON HIGH FREQUENCY TRANSISTOR

NE678M04

FEATURES

•

HIGH GAIN BANDWIDTH:

fT = 12 GHz

HIGH OUTPUT POWER:

P-1dB = 18 dBm at 1.8 GHz

HIGH LINEAR GAIN:

GL = 13 dB at 1.8 GHz

2.05±0.1

1.25±0.1

NEW LOW PROFILE M04 PACKAGE:

SOT-343 footprint, with a height of only 0.59 mm

Flat lead style for better RF performance

DESCRIPTION

NEC's NE678M04 is fabricated using NEC's HFT3 wafer

process. Withatransitionfrequencyof12GHz, theNE678M04

isusableinapplicationsfrom100MHzto3GHz.TheNE678M04

provides P1dB of 18 dBm, even with low voltage and low

current, making this device an excellent choice for the driver

stage for mobile or fixed wireless applications.

+0.01

-0.05

(leads 1, 3 and ,4)

+0.30

The NE678M04 is housed in NEC's new low profile/flat lead

style "M04" package

PIN CONNECTIONS

1. Emitter

2. Collector

3. Emitter

4. Base

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE678M04

M04

EIAJ³REGISTRATION NUMBER

2SC5753

SYMBOLS

PARAMETERS AND CONDITIONS

Collector Cutoff Current at VCB = 5V, IE = 0

UNITS

MIN

TYP

MAX

ICBO

IEBO

hFE

100

150

Emitter Cutoff Current at VEB = 1 V, IC = 0

DC Current¹Gain at VCE = 3 V, IC = 30 mA

120

P1dB

Output Power at 1 dB compression point at VCE = 2.8 V, ICQ = 10 mA,

f = 1.8 GHz, Pin = 7 dBm

dBm

18.0

MAG

|S21E|²

ηc

Linear Gain at VCE = 2.8 V, IC = 10 mA, f = 1.8 GHz, Pin = -5 dBm

Maximum Available Gain⁴at VCE = 3 V, IC = 30 mA, f = 2 GHz

Insertion Power Gain at VCE = 3 V, IC = 30 mA, f = 2 GHz

dBm

13.0

13.5

10.5

8.0

Collector Efficiency at VCE = 2.8 V, ICQ = 10 mA, f = 1.8 GHz,

Pin = 7 dBm

Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz, ZS = Zopt

Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz

GHz

1.7

2.5

0.7

12.0

0.42

Cre

Reverse Transfer Capacitance²at VCB = 3 V, IC = 0, f = 1 MHz

Notes:

1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the

guard pin of capacitance meter.

3. Electronic Industrail Association of Japan.

K ²^{- 1}).

|S21

|S12

MAG =

California Eastern Laboratories

12 3 4 5 6 7 8

中文翻译

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与NE678M04-T2-A相关器件

型号	品牌	获取价格	描述	数据表
NE680	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68000	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68018	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN, PLASTIC,
NE68018-T1	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68018-T1-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,10V V(BR)CEO,35MA I(C),SOT-343
NE68018-T2	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN
NE68019	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), S Band, Silicon, NPN, PLASTIC, SC-90
NE68019-T1	NEC	获取价格	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68019-T1-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,10V V(BR)CEO,35MA I(C),SOT-416
NE68019-T2	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN

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