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NE67483B

更新时间： 2024-02-09 02:09:47
品牌 Logo 应用领域
CEL 晶体放大器晶体管
页数 文件大小 规格书
7页 111K
描述
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET

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中文翻译

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NE67483B 技术参数

生命周期：Obsolete包装说明：DISK BUTTON, O-XRDB-F4
针数：4Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.84Is Samacsys：N
其他特性：LOW NOISE外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：4 V
最大漏极电流 (ID)：0.03 AFET 技术：METAL SEMICONDUCTOR
最高频带：KU BANDJESD-30 代码：O-XRDB-F4
元件数量：1端子数量：4
工作模式：DEPLETION MODE封装主体材料：UNSPECIFIED
封装形状：ROUND封装形式：DISK BUTTON
极性/信道类型：N-CHANNEL最小功率增益 (Gp)：8.5 dB
认证状态：Not Qualified表面贴装：YES
端子形式：FLAT端子位置：RADIAL
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

NE67483B 数据手册

 浏览型号NE67483B的Datasheet PDF文件第2页浏览型号NE67483B的Datasheet PDF文件第3页浏览型号NE67483B的Datasheet PDF文件第4页浏览型号NE67483B的Datasheet PDF文件第5页浏览型号NE67483B的Datasheet PDF文件第6页浏览型号NE67483B的Datasheet PDF文件第7页 
NE67400  
NEC's L TO Ku BAND LOW NOISE  
NE67483B  
AMPLIFIER N-CHANNEL GaAS MESFET  
NOISE FIGURE, ASSOCIATED GAIN  
vs. FREQUENCY  
FEATURES  
24  
• LOW NOISE FIGURE:  
NF = 1.4 dB TYP at f = at 12 GHz  
V
DS = 3 V  
ID = 10 mA  
• HIGH ASSOCIATED GAIN:  
GA = 10 dB TYP at f = 12 GHz  
20  
16  
• GATE WIDTH: WG = 280 µm  
• GATE LENGTH: LG = 0.3 µm  
3.0  
GA  
2.0  
1.0  
0
12  
8
DESCRIPTION  
NEC'sNE674isaLtoKuBandlownoiseGaAsMESFET. This  
device features a low noise figure with high associated gain,  
employing a recessed 0.3 micron gate and triple epitaxial  
technology. The active area of the chip is covered with SiD2  
and Si3N4 for scratch protection and surface stability. This  
device is suitable for both amplifier and oscillator applications.  
This device is housed in a solder sealed hermetic, metal  
ceramic package for high reliability in space applications.  
NF  
4
1
2
4
6
8 10 14 20 30  
Frequency, f (GHz)  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
NE67400  
PACKAGE OUTLINE  
NE67483B  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
NF  
Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz  
f = 12 GHz  
dB  
dB  
0.6  
1.4  
1.6  
GA  
Associated Gain at VDS = 3 V ID = 10 mA, f = 4 GHz  
f = 12 GHz  
dB  
dB  
14.0  
10.0  
8.5  
P1dB  
Output Power at 1 dB Gain Compression Point, f = 12 GHz,  
VDS = 3 V, IDS = 30 mA  
dBm  
mA  
V
14.5  
40  
IDSS  
VGS(OFF)  
gm  
Saturated Drain Current at VDS = 3 V, VGS = 0 V  
Gate to Source Cut Off Voltage at VDS = 3 V, ID = 100 µA  
Transconductance at VDS = 3 V, ID = 10 mA  
20  
-0.5  
20  
120  
-3.5  
100  
10  
-1.1  
50  
mS  
µA  
IGSO  
Gate to Source Leakage Current at VGS = -5 V  
1.0  
RTH (CH-C)  
Thermal Resistance (Channel-to-Case)  
NE67400  
°C/W  
°C/W  
190  
450  
NE67483B  
California Eastern Laboratories  
1234567

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