Datasheet > NE67300

NE67300

更新时间： 2024-11-14 03:46:43

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管放大器
页数	文件大小	规格书
7页	101K
描述
LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY

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中文翻译

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技术参数
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NE67300 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.84	最高频带：	KU BAND
JESD-30 代码：	X-XUUC-N	封装主体材料：	UNSPECIFIED
封装形状：	UNSPECIFIED	封装形式：	UNCASED CHIP
最小功率增益 (Gp)：	10 dB	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	UPPER	晶体管元件材料：	GALLIUM ARSENIDE

NE67300 数据手册

LOW NOISE Ku-K BAND

GaAs MESFET

FOR HI REL APPLICATIONS ONLY

NE67300

NE67383

FEATURES

NOISE FIGURE AND

ASSOCIATED GAIN vs. FREQUENCY

VDS = 3 V, IDS = 10 mA

•

VERY HIGH fMAX: 100 GHz

LOW NOISE FIGURE

0.4 dB at 4 GHz

0.8 dB at 8 GHz

1.4 dB at 12 GHz

1.9 dB at 18 GHz

3.3 dB at 26 GHz

•

LG = 0.3 µm, WG = 280 µm

N+ CONTACT LAYER

(Triple Epitaxial Technology)

•

PROVEN RELIABILITY AND STABILITY

SPACE QUALIFIED

NFOPT

DESCRIPTION

Frequency, f (GHz)

The NE673 features a low noise figure and high associated

gain through K-band by employing a recessed 0.3 micron

gate and triple epitaxial technology for industrial and space

applications.

The device is available as a chip (NE67300). The chip's gate

and channel are glassivated with a thin layer of Si3N4 for

mechanical protection only. The NE673 is in a rugged

hermetically sealed metal/ceramic stripline package selected

for NFOPT performance at 12.0 GHz.

NEC's stringent quality assurance and test procedures as-

sure the highest reliability and performance.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ REGISTERED NUMBER

NE67300

00 (CHIP)

NE67383

2SK407

PACKAGE OUTLINE

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS MIN TYP MAX MIN TYP MAX

NFOPT

Optimum Noise Figure at VDS = 3 V, IDS = 10 mA, f =12 GHz

1.4

1.6

1.4

1.6

Associated Gain at Optimum Noise Figure at VDS = 3 V,

IDS = 10 mA, f = 12 GHz

8.5

P1dB

Output Power at 1 dB Compression Point at VDS = 3 V,

IDS = 30 mA, f = 12 GHz

dBm

14.5

IDS

Saturated Drain Current at VDS = 3 V, VGS = 0

Pinch-off Voltage at VDS = 3 V, IDS = 0.1 mA

Transconductance at VDS = 3 V, IDS = 10 mA

Gate to Source Leakage Current at VGS = -5 V

ThermalResistance(Channel-to-Ambient)

120

-0.5 -1.1 -3.5 -0.5 -1.1 -3.5

°C/W

100

190²

100

IGS

RTH (CH-A)

450

Notes:

1. Electronic Industrial Association of Japan.

2. RTH (Channel to Case) for chips mounted on an infinite heat sink.

California Eastern Laboratories

12 3 4 5 6 7

中文翻译

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与NE67300相关器件

型号	品牌	获取价格	描述	数据表
NE67383	NEC	获取价格	LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY
NE67383-4	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 5V V(BR)DSS \| MICRO-X
NE67400	CEL	获取价格	NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
NE67483B	CEL	获取价格	NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
NE677M04	CEL	获取价格	MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE677M04-T2	ETC	获取价格	NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE677M04-T2-A	CEL	获取价格	MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE678M04	CEL	获取价格	MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE678M04	NEC	获取价格	MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE678M04-T2	NEC	获取价格	MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

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