Datasheet > NE67400

NE67400

更新时间： 2024-11-14 22:45:23

品牌	Logo	应用领域
CEL		晶体放大器晶体管
页数	文件大小	规格书
7页	111K
描述
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET

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NE67400 数据手册

NE67400

NEC's L TO Ku BAND LOW NOISE

NE67483B

AMPLIFIER N-CHANNEL GaAS MESFET

NOISE FIGURE, ASSOCIATED GAIN

vs. FREQUENCY

FEATURES

• LOW NOISE FIGURE:

NF = 1.4 dB TYP at f = at 12 GHz

DS = 3 V

ID = 10 mA

• HIGH ASSOCIATED GAIN:

GA = 10 dB TYP at f = 12 GHz

• GATE WIDTH: WG = 280 µm

• GATE LENGTH: LG = 0.3 µm

3.0

2.0

1.0

DESCRIPTION

NEC'sNE674isaLtoKuBandlownoiseGaAsMESFET. This

device features a low noise figure with high associated gain,

employing a recessed 0.3 micron gate and triple epitaxial

technology. The active area of the chip is covered with SiD2

and Si3N4 for scratch protection and surface stability. This

device is suitable for both amplifier and oscillator applications.

This device is housed in a solder sealed hermetic, metal

ceramic package for high reliability in space applications.

8 10 14 20 30

Frequency, f (GHz)

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

NE67400

PACKAGE OUTLINE

NE67483B

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz

f = 12 GHz

0.6

1.4

1.6

Associated Gain at VDS = 3 V ID = 10 mA, f = 4 GHz

f = 12 GHz

14.0

10.0

8.5

P1dB

Output Power at 1 dB Gain Compression Point, f = 12 GHz,

VDS = 3 V, IDS = 30 mA

dBm

14.5

IDSS

VGS(OFF)

Saturated Drain Current at VDS = 3 V, VGS = 0 V

Gate to Source Cut Off Voltage at VDS = 3 V, ID = 100 µA

Transconductance at VDS = 3 V, ID = 10 mA

-0.5

120

-3.5

100

-1.1

µA

IGSO

Gate to Source Leakage Current at VGS = -5 V

1.0

RTH (CH-C)

Thermal Resistance (Channel-to-Case)

NE67400

°C/W

190

450

NE67483B

California Eastern Laboratories

12 3 4 5 6 7

中文翻译

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