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NE67400

更新时间： 2024-01-13 08:00:48
品牌 Logo 应用领域
CEL 晶体放大器晶体管
页数 文件大小 规格书
7页 111K
描述
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET

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NE67400 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.84其他特性：LOW NOISE, HIGH RELIABILITY
配置：SINGLE最小漏源击穿电压：5 V
FET 技术：METAL SEMICONDUCTOR最高频带：KU BAND
JESD-30 代码：R-XUUC-N3元件数量：1
端子数量：3工作模式：DEPLETION MODE
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：UNCASED CHIP极性/信道类型：N-CHANNEL
最小功率增益 (Gp)：8.5 dB认证状态：Not Qualified
表面贴装：YES端子形式：NO LEAD
端子位置：UPPER晶体管应用：AMPLIFIER
晶体管元件材料：GALLIUM ARSENIDEBase Number Matches：1

NE67400 数据手册

 浏览型号NE67400的Datasheet PDF文件第2页浏览型号NE67400的Datasheet PDF文件第3页浏览型号NE67400的Datasheet PDF文件第4页浏览型号NE67400的Datasheet PDF文件第5页浏览型号NE67400的Datasheet PDF文件第6页浏览型号NE67400的Datasheet PDF文件第7页 
NE67400  
NEC's L TO Ku BAND LOW NOISE  
NE67483B  
AMPLIFIER N-CHANNEL GaAS MESFET  
NOISE FIGURE, ASSOCIATED GAIN  
vs. FREQUENCY  
FEATURES  
24  
• LOW NOISE FIGURE:  
NF = 1.4 dB TYP at f = at 12 GHz  
V
DS = 3 V  
ID = 10 mA  
• HIGH ASSOCIATED GAIN:  
GA = 10 dB TYP at f = 12 GHz  
20  
16  
• GATE WIDTH: WG = 280 µm  
• GATE LENGTH: LG = 0.3 µm  
3.0  
GA  
2.0  
1.0  
0
12  
8
DESCRIPTION  
NEC'sNE674isaLtoKuBandlownoiseGaAsMESFET. This  
device features a low noise figure with high associated gain,  
employing a recessed 0.3 micron gate and triple epitaxial  
technology. The active area of the chip is covered with SiD2  
and Si3N4 for scratch protection and surface stability. This  
device is suitable for both amplifier and oscillator applications.  
This device is housed in a solder sealed hermetic, metal  
ceramic package for high reliability in space applications.  
NF  
4
1
2
4
6
8 10 14 20 30  
Frequency, f (GHz)  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
NE67400  
PACKAGE OUTLINE  
NE67483B  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
NF  
Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz  
f = 12 GHz  
dB  
dB  
0.6  
1.4  
1.6  
GA  
Associated Gain at VDS = 3 V ID = 10 mA, f = 4 GHz  
f = 12 GHz  
dB  
dB  
14.0  
10.0  
8.5  
P1dB  
Output Power at 1 dB Gain Compression Point, f = 12 GHz,  
VDS = 3 V, IDS = 30 mA  
dBm  
mA  
V
14.5  
40  
IDSS  
VGS(OFF)  
gm  
Saturated Drain Current at VDS = 3 V, VGS = 0 V  
Gate to Source Cut Off Voltage at VDS = 3 V, ID = 100 µA  
Transconductance at VDS = 3 V, ID = 10 mA  
20  
-0.5  
20  
120  
-3.5  
100  
10  
-1.1  
50  
mS  
µA  
IGSO  
Gate to Source Leakage Current at VGS = -5 V  
1.0  
RTH (CH-C)  
Thermal Resistance (Channel-to-Case)  
NE67400  
°C/W  
°C/W  
190  
450  
NE67483B  
California Eastern Laboratories  
1234567

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