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NE662M16-T3 PDF预览

NE662M16-T3

更新时间： 2024-11-13 22:45:23
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
9页 65K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

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中文翻译

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NE662M16-T3 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：M16, 6 PINReach Compliance Code：compliant
风险等级：5.86其他特性：LOW NOISE
最大集电极电流 (IC)：0.035 A基于收集器的最大容量：0.24 pF
集电极-发射极最大电压：3.3 V配置：SINGLE
最高频带：X BANDJESD-30 代码：R-PDSO-F6
JESD-609代码：e0元件数量：1
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：25000 MHzBase Number Matches：1

NE662M16-T3 数据手册

 浏览型号NE662M16-T3的Datasheet PDF文件第2页浏览型号NE662M16-T3的Datasheet PDF文件第3页浏览型号NE662M16-T3的Datasheet PDF文件第4页浏览型号NE662M16-T3的Datasheet PDF文件第5页浏览型号NE662M16-T3的Datasheet PDF文件第6页浏览型号NE662M16-T3的Datasheet PDF文件第7页 
NPN SILICON HIGH  
FREQUENCY TRANSISTOR  
NE662M16  
FEATURES  
•
•
•
•
HIGH GAIN BANDWIDTH: fT = 25 GHz  
LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz  
HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz  
NEW LOW PROFILE M16 PACKAGE:  
• Flat Lead Style with a height of just 0.50mm  
DESCRIPTION  
The NE662M16 is fabricated using NEC's UHS0 25 GHz fT  
wafer process. With a typical transition frequency of 25 GHz  
the NE662M16 is usable in applications from 100 MHz to over  
10 GHz. The NE662M16 provides excellent low voltage/low  
current performance.  
M16  
NEC's new low profile/flat lead style "M16" package is ideal for  
today's portable wireless applications. The NE662M16 is an  
ideal choice for LNA and oscillator requirements in all mobile  
communication systems.  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
EIAJ1 REGISTERED NUMBER  
PACKAGE OUTLINE  
NE662M16  
2SC5704  
M16  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
nA  
MIN  
TYP  
MAX  
200  
200  
100  
ICBO  
IEBO  
hFE  
Collector Cutoff Current at VCB = 5V, IE = 0  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
Forward Current Gain2 at VCE = 2 V, IC = 5 mA  
Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz  
nA  
50  
20  
70  
25  
20  
17  
1.1  
fT  
GHz  
dB  
MSG  
|S21E|2  
NF  
Maximum Stable Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz  
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz  
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT  
dB  
14  
dB  
1.5  
P1dB  
Output Power at 1 dB compression point at  
VCE = 2 V, IC = 20 mA, f = 2 GHz  
dBm  
pF  
11  
22  
IP3  
Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz  
Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz  
Cre  
0.14  
0.24  
Notes:  
1. Electronic Industrial Association of Japan.  
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.  
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.  
S21  
S12  
4. MSG =  
1234567...9

中文翻译

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