Datasheet > NE663M04

NE663M04

更新时间： 2024-11-13 21:53:51

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
10页	198K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

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数据手册

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NE663M04 数据手册

NPN SILICON HIGH

FREQUENCY TRANSISTOR

NE663M04

FEATURES

•

HIGH GAIN BANDWIDTH: fT = 15 GHz

HIGH POWER GAIN: IS21EI²= 11 dB TYP at 2 GHz

LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz

HIGH IP3: NF = 27 dBm at 2 GHz

HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz

LOW PROFILE M04 PACKAGE:

SOT-343 footprint, with a height of just 0.59 mm.

Flat Lead Style for better RF performance.

DESCRIPTION

M04

NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz fT

wafer process. With a typical transition frequency of 19 GHz

the NE663M04 is usable in applications from 100 MHz to 5

GHz. The NE663M04 provides excellent low voltage/low

current performance.

NEC's low profile/flat lead style "M04" package is ideal for

today's portable wireless applications. The NE663M04 is an

ideal choice for LNA and oscillator requirements in all mobile

communication systems.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE663M04

2SC5509

M04

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

µA

MIN

TYP

MAX

ICBO

IEBO

hFE

Collector Cutoff Current at VCE = 5 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

0.6

µA

Forward Current Gain²at VCE = 2 V, IC = 10 mA

Gain Bandwidth at VCE = 3 V, IC = 90 mA, f = 2 GHz

100

GHz

|S21E|²

MSG

P1dB

Insertion Power Gain at VCE = 2 V, IC = 50 mA, f = 2 GHz

Maximum Stable Gain⁴at VCE = 2 V, IC = 50 mA, f = 2 GHz

Output Power at 1 dB compression point at

VCE = 2 V, IC = 70 mA⁵, f = 2 GHz

dBm

IP3

Third Order Intercept Point at VCE = 2 V, IC = 70 mA, f = 2 GHz

Noise Figure at VCE = 2 V, IC = 10 mA, f = 2 GHz, ZIN = ZOPT

Feedback Capacitance³at VCB = 2 V, IC = 0, f = 1 MHz

1.2

0.5

1.7

Cre

0.75

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.

S21

S12

4. MSG =

5. Collector current at P1dB compression.

California Eastern Laboratories

12 3 4 5 6 7...10

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