Datasheet > NE662M16

NE662M16

更新时间： 2024-09-26 03:46:43

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
10页	176K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

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中文翻译

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NE662M16 数据手册

NPN SILICON HIGH

FREQUENCY TRANSISTOR

NE662M16

FEATURES

•

HIGH GAIN BANDWIDTH: fT = 25 GHz

LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz

HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz

NEW LOW PROFILE M16 PACKAGE:

• Flat Lead Style with a height of just 0.50mm

DESCRIPTION

NEC's NE662M16 is fabricated using NEC's UHS0 25 GHz fT

wafer process. With a typical transition frequency of 25 GHz

the NE662M16 is usable in applications from 100 MHz to over

10 GHz. The NE662M16 provides excellent low voltage/low

current performance.

M16

NEC's new low profile/flat lead style "M16" package is ideal for

today's portable wireless applications. The NE662M16 is an

ideal choice for LNA and oscillator requirements in all mobile

communication systems.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE662M16

2SC5704

M16

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

200

100

ICBO

IEBO

hFE

Collector Cutoff Current at VCB = 5V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

Forward Current Gain²at VCE = 2 V, IC = 5 mA

Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz

1.1

GHz

MSG

|S21E|²

Maximum Stable Gain⁴at VCE = 2 V, IC = 20 mA, f = 2 GHz

Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz

Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT

1.5

P1dB

Output Power at 1 dB compression point at

VCE = 2 V, IC = 20 mA, f = 2 GHz

dBm

IP3

Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz

Feedback Capacitance³at VCB = 2 V, IC = 0, f = 1 MHz

Cre

0.14

0.24

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.

S21

S12

4. MSG =

12 3 4 5 6 7...10

中文翻译

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