Datasheet > NE66219-T1

NE66219-T1

更新时间： 2024-11-15 01:09:27

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
6页	329K
描述
NPN SILICON RF TRANSISTOR FOR LOW NOISE Â· HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

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数据手册

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NE66219-T1 数据手册

NPN SILICON RF TRANSISTOR

NE66219 / 2SC5606

NPN SILICON RF TRANSISTOR FOR

LOW NOISE · HIGH-GAIN AMPLIFICATION

3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

FEATURES

• Suitable for high-frequency oscillation

• fT = 25 GHz technology adopted

• 3-pin ultra super minimold (19, 1608 PKG) package

<R> ORDERING INFORMATION

Part Number Order Number

Package

Quantity

Supplying Form

• 8 mm wide embossed taping

NEC66219

2SC5606

NE66219-A

2SC5606-A

3-pin ultra super minimold

(19, 1608 PKG) (Pb-Free)

50 pcs (Non reel)

NE66219-T1 NE66219-T1-A

2SC5606-T1 2SC5606-T1-A

3 kpcs/reel

• Pin 3 (collector) face the perforation side of the tape

Remark To order evaluation samples, please contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

3.3

1.5

C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

115

150

Tstg

65 to +150

Note Mounted on 1.08 cm² 1.0 mm (t) glass epoxy substrate

Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge

Document No. PU10781EJ01V0DS (1st edition)

(Previous No. P14658EJ3V0DS00)

Date Published August 2009 NS

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6

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NE66219-T1-A	CEL	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE Â· HI
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NE662M03-T1	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
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NE662M03-T1-FB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
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