NE662M04

更新时间： 2024-11-13 21:54:59

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
10页	94K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NE662M04 数据手册

NPN SILICON HIGH

FREQUENCY TRANSISTOR

NE662M04

FEATURES

•

HIGH GAIN BANDWIDTH: fT = 25 GHz

LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz

HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz

NEW LOW PROFILE M04 PACKAGE:

• SOT-343 footprint, with a height of just 0.59 mm

• Flat Lead Style for better RF performance

DESCRIPTION

The NE662M04 is fabricated using NEC's UHS0 25 GHz fT

wafer process. With a typical transition frequency of 25 GHz

the NE662M04 is usable in applications from 100 MHz to 10

GHz. The NE662M04 provides excellent low voltage/low cur-

rent performance.

M04

NEC's new low profile/flat lead style "M04" package is ideal for

today's portable wireless applications. The NE662M04 is an

ideal choice for LNA and oscillator requirements in all mobile

communication systems.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE662M04

2SC5508

M04

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

ICBO

IEBO

hFE

Collector Cutoff Current at VCB = 5V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

Forward Current Gain²at VCE = 2 V, IC = 5 mA

Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz

200

100

1.1

GHz

MAG

MSG

|S21E|²

Maximum Available Power Gain⁴at VCE = 2 V, IC = 20 mA, f = 2 GHz

Maximum Stable Gain⁵at VCE = 2 V, IC = 20 mA, f = 2 GHz

Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz

Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT

1.5

P1dB

Output Power at 1 dB compression point at

VCE = 2 V, IC = 20 mA, f = 2 GHz

dBm

IP3

Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz

Feedback Capacitance³at VCB = 2 V, IC = 0, f = 1 MHz

Cre

0.18

0.24

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.

S21

S12

(^{K- (K}²^-1))

4. MAG =

S21

5. MSG =

S12

California Eastern Laboratories

12 3 4 5 6 7...10

中文翻译

下载PDF

与NE662M04相关器件

型号	品牌	获取价格	描述	数据表
NE662M04-T2	NEC	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE662M04-T2	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE662M04-T2-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE662M16	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE662M16	NEC	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE662M16-T3	NEC	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE662M16-T3-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE663M04	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE663M04-T2-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE663M04-T2-A	RENESAS	获取价格	TRANSISTOR,BJT,DARLINGTON,NPN,3.3V V(BR)CEO,100MA I(C),SOT-343VAR