是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 最大集电极电流 (IC): | 0.035 A |
配置: | Single | 最小直流电流增益 (hFE): | 60 |
JESD-609代码: | e0 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.115 W |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE662M03-FB | NEC |
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RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU | |
NE662M03-FB-A | NEC |
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RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU | |
NE662M03-T1 | RENESAS |
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RF SMALL SIGNAL TRANSISTOR | |
NE662M03-T1FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU | |
NE662M03-T1-FB | RENESAS |
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RF SMALL SIGNAL TRANSISTOR | |
NE662M03-T1FB-A | NEC |
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RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU | |
NE662M04 | CEL |
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NPN SILICON HIGH FREQUENCY TRANSISTOR | |
NE662M04 | NEC |
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NPN SILICON HIGH FREQUENCY TRANSISTOR | |
NE662M04-T2 | NEC |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR | |
NE662M04-T2 | CEL |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |