Datasheet > NE661M04-T2-A

NE661M04-T2-A

更新时间： 2024-11-14 03:46:43

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
10页	190K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

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中文翻译

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数据手册

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NE661M04-T2-A 数据手册

NPN SILICON HIGH

FREQUENCY TRANSISTOR

NE661M04

FEATURES

•

HIGH GAIN BANDWIDTH: fT = 25 GHz

HIGH POWER GAIN: IS21EI²= 17 dB TYP at 2 GHz

LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz

•

HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz

•

NEW LOW PROFILE M04 PACKAGE:

SOT-343 footprint, with a height of just 0.59 mm.

Flat Lead Style for better RF performance.

DESCRIPTION

M04

NEC's NE661M04 is fabricated using NEC's UHS0 25 GHz fT

wafer process. With a typical transition frequency of 25 GHz

the NE661M04 is usable in applications from 100 MHz to 10

GHz. The NE661M04 provides excellent low voltage/low cur-

rent performance.

NEC's new low profile/flat lead style "M04" package is ideal for

today's portable wireless applications. The NE661M04 is an

ideal choice for LNA and oscillator requirements in all mobile

communication systems.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE661M04

2SC5507

M04

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

µA

MIN

TYP

MAX

0.1

ICBO

IEBO

hFE

Collector Cutoff Current at VCE = 5 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

µA

0.1

Forward Current Gain²at VCE = 2 V, IC = 5 mA

Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz

1.2

100

GHz

MSG

|S21E|²

Maximum Stable Gain⁴at VCE = 2 V, IC = 5 mA, f = 2 GHz

Insertion Power Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz

Noise Figure at VCE = 2 V, IC = 2 mA, f = 2 GHz, ZIN = ZOPT

1.5

P1dB

Output Power at 1 dB compression point at

VCE = 2 V, IC = 5 mA, f = 2 GHz

dBm

IP3

Third Order Intercept Point at VCE = 2 V, IC = 5 mA, f = 2 GHz

Feedback Capacitance³at VCB = 2 V, IC = 0, f = 1 MHz

Cre

0.08

0.12

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.

S21

S12

4. MSG =

California Eastern Laboratories

12 3 4 5 6 7...10

中文翻译

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与NE661M04-T2-A相关器件

型号	品牌	获取价格	描述	数据表
NE661M05	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINI MOLD, M05, 4 PIN
NE661M05	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, THIN, SU
NE661M05FB	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINI MOLD, M05, 4 PIN
NE661M05FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, THIN, SU
NE661M05-FB	NEC	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, M05, THIN, SUPER MINIMOLD PACKAGE-4
NE661M05-FB-A	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, M05, THIN, SUPER MINIMOLD PACKAGE-4
NE661M05-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, M05, THI
NE661M05-T1	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINI MOLD, M05, 4 PIN
NE661M05-T1-A	RENESAS	获取价格	RF POWER AMP TRANSISTOR, FT > 300 MHZ,3.3V V(BR)CEO,12MA I(C),SOT-343VAR
NE661M05-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, M05, THI

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