Datasheet > NE661M05-FB

NE661M05-FB

更新时间： 2024-11-14 15:46:07

品牌	Logo	应用领域
日电电子 - NEC		放大器光电二极管晶体管
页数	文件大小	规格书
13页	73K
描述
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, M05, THIN, SUPER MINIMOLD PACKAGE-4

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技术参数
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NE661M05-FB 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	SMALL OUTLINE, R-PDSO-F4	针数：	4
Reach Compliance Code：	compliant	风险等级：	5.14
最大集电极电流 (IC)：	0.012 A	基于收集器的最大容量：	0.12 pF
集电极-发射极最大电压：	3.3 V	配置：	SINGLE
最高频带：	L BAND	JESD-30 代码：	R-PDSO-F4
JESD-609代码：	e0	元件数量：	1
端子数量：	4	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	25000 MHz	Base Number Matches：	1

NE661M05-FB 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

NE661M05

NPN SILICON RF TRANSISTOR FOR

LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05)

FEATURES

•

Low noise and high gain with low collector current

NF = 1.2 dB TYP. @ V^CE= 2 V, I^C= 2 mA, f = 2 GHz

Maximum stable power gain : MSG = 22.0 dB TYP. @ V^CE= 2 V, I^C= 5 mA, f = 2 GHz

f^T= 25 GHz technology

•

Flat-lead 4-pin thin-type super minimold (M05) package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

NE661M05

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape

NE661M05-T1

Remark To order evaluation samples, contact your nearby sales office.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

3.3

1.5

°C

tot ^Note

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PCB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10323EJ02V0DS (2nd edition)

Date Published May 2003 CP(K)

The mark • shows major revised points.

Printed in Japan

NEC Compound Semiconductor Devices 2002, 2003

12 3 4 5 6 7...13

中文翻译

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与NE661M05-FB相关器件

型号	品牌	获取价格	描述	数据表
NE661M05-FB-A	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, M05, THIN, SUPER MINIMOLD PACKAGE-4
NE661M05-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, M05, THI
NE661M05-T1	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINI MOLD, M05, 4 PIN
NE661M05-T1-A	RENESAS	获取价格	RF POWER AMP TRANSISTOR, FT > 300 MHZ,3.3V V(BR)CEO,12MA I(C),SOT-343VAR
NE661M05-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, M05, THI
NE661M05-T1-FB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
NE661M05-T1FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, M05, THI
NE66219	CEL	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE Â· HI
NE66219-A	CEL	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE Â· HI
NE66219-T1	CEL	获取价格	NPN SILICON RF TRANSISTOR FOR LOW NOISE Â· HI

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