Datasheet > NE661M04

NE661M04

更新时间： 2024-11-13 22:36:55

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管射频
页数	文件大小	规格书
12页	71K
描述
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

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NE661M04 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

NE661M04

NPN SILICON RF TRANSISTOR FOR LOW CURRENT,

LOW NOISE, HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

FEATURES

•

Low noise and high gain with low collector current

NF = 1.2 dB, G^a= 16 dB TYP. @f = 2 GHz, V^CE= 2 V, I^C= 2 mA

Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, V^CE= 2 V, I^C= 5 mA

f^T= 25 GHz technology

Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)

ORDERING INFORMATION

Part Number

Quantity

Packaging Style

NE661M04

Loose product (50 pcs)

• 8 mm wide emboss taping

• 1 pin (emitter), 2 pin (collector) feed hole direction

NE661M04-T2

Taping product (3 kpcs/reel)

Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).

ABSOLUTE MAXIMUM RATINGS

Parameter

Collector to Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

3.3

1.5

°C

tot^Note

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

–65 to +150

Note T^A= +25°C (free air)

THERMAL RESISTANCE

Item

Symbol

R^{th j-c}

Value

240

Unit

°C/W

Junction to Case Resistance

Junction to Ambient Resistance

R^{th j-a}

650

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14909EJ1V0DS00 (1st edition)

Date Published June 2000 N CP(K)

Printed in Japan

2000

12 3 4 5 6 7...12

中文翻译

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与NE661M04相关器件

型号	品牌	获取价格	描述	数据表
NE661M04-T2	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-
NE661M04-T2-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE661M04-T2-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,3.3V V(BR)CEO,12MA I(C),SOT-343VAR
NE661M05	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINI MOLD, M05, 4 PIN
NE661M05	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, THIN, SU
NE661M05FB	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINI MOLD, M05, 4 PIN
NE661M05FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, THIN, SU
NE661M05-FB	NEC	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, M05, THIN, SUPER MINIMOLD PACKAGE-4
NE661M05-FB-A	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, M05, THIN, SUPER MINIMOLD PACKAGE-4
NE661M05-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, M05, THI