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NE651R479A-T1-A

更新时间： 2024-11-14 03:46:43

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
11页	502K
描述
MEDIUM POWER GaAs HJ-FET

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中文翻译

获取价格

数据手册

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NE651R479A-T1-A 数据手册

NEC's 1 W, L&S-BAND

MEDIUM POWER GaAs HJ-FET

NE651R479A

FEATURES

OUTLINE DIMENSIONS (Units in mm)

• LOW COST PLASTIC SURFACE MOUNT PACKAGE

Available on Tape and Reel

PACKAGE OUTLINE 79A

• USABLE TO 3.7 GHz:

Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,

PCS

1.5 ± 0.2

4.2 Max

Source

• HIGH OUTPUT POWER:

30 dBm TYP with 5.0 V Vdc

27 dBm TYP with 3.5 V Vdc

Source

Drain

Gate

Drain

Gate

• HIGH LINEAR GAIN:

12 dB TYP at 1.9 GHz

• LOW THERMAL RESISTANCE:

30°C/W

0.4 ± 0.15

5.7 Max

0.8 Max

3.6 ± 0.2

DESCRIPTION

(Bottom View)

NEC's NE651R479A is a GaAs HJ-FET designed for medium

power mobile communications, Fixed Wireless Access, ISM,

WLL, PCS, IMT-2000, and MMDS transmitter and subscriber

applications. It is capable of delivering 0.5 Watts of output

power (CW) at 3.5 V, and 1 Watt of output power (CW) at 5 V

with high linear gain, high efficiency, and excellent linearity.

Reliability and performance uniformity are assured by NEC's

stringent quality and control procedures.

TYPICAL 5 V RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC = 25°C)

SYMBOLS

POUT

CHARACTERISTICS

UNITS

dBm

MIN

TYP

29.5

12.0

MAX

TEST CONDITIONS

Output Power

f = 1.9 GHz, VDS = 5 V

PIN = +15 dBm, RG = 1 k Ω,

IDSQ = 50 mA (RF OFF)

Linear Gain¹

ηADD

Power Added Efficiency

Drain Current

350

Note:

1. PIN = 0 dBm.

ELECTRICAL CHARACTERISTICS (TC = 25°C)

PART NUMBER

NE651R479A

PACKAGE OUTLINE

79A

TYP

27.0

12.0

SYMBOLS

POUT

CHARACTERISTICS

Output Power

UNITS

dBm

MIN

MAX

TEST CONDITIONS

f = 1.9 GHz, VDS =3.5 V

PIN = +15 dBm, RG = 1 k Ω,

IDSQ = 50 mA (RF OFF)²

26.0

Linear Gain¹

ηADD

Power Added Efficiency

Drain Current

220

0.7

IDSS

Saturated Drain Current

Pinch-Off Voltage

VDS = 2.5 V, VGS = 0 V

VDS = 2.5 V, ID = 14 mA

IGD = 14 mA

-2.0

-0.4

BVGD

RTH

Gate to Drain Break Down Voltage

Thermal Resistance, Channel to Case

°C/W

Notes:

1. PIN = 0 dBm.

2. DC performance is 100% tested. Wafers are sample tested for RF performance.

Wafer rejection criteria for standard devices is 1 reject for sample lot.

California Eastern Laboratories

12 3 4 5 6 7...11

中文翻译

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与NE651R479A-T1-A相关器件

型号	品牌	获取价格	描述	数据表
NE661M04	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE661M04	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-
NE661M04-T2	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-
NE661M04-T2-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE661M04-T2-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,3.3V V(BR)CEO,12MA I(C),SOT-343VAR
NE661M05	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINI MOLD, M05, 4 PIN
NE661M05	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, THIN, SU
NE661M05FB	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINI MOLD, M05, 4 PIN
NE661M05FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, THIN, SU
NE661M05-FB	NEC	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, M05, THIN, SUPER MINIMOLD PACKAGE-4

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