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NE651R479A

更新时间： 2024-11-14 03:46:43
品牌 Logo 应用领域
CEL 晶体小信号场效应晶体管射频小信号场效应晶体管放大器
页数 文件大小 规格书
11页 502K
描述
MEDIUM POWER GaAs HJ-FET

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中文翻译

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NE651R479A 技术参数

生命周期：Obsolete包装说明：MICROWAVE, R-PQMW-F4
针数：4Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.74
Is Samacsys：N外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：5.5 V
最大漏极电流 (ID)：1 AFET 技术：HETERO-JUNCTION
最高频带：S BANDJESD-30 代码：R-PQMW-F4
元件数量：1端子数量：4
工作模式：DEPLETION MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：MICROWAVE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：FLAT
端子位置：QUAD晶体管应用：AMPLIFIER
晶体管元件材料：GALLIUM ARSENIDEBase Number Matches：1

NE651R479A 数据手册

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NEC's 1 W, L&S-BAND  
MEDIUM POWER GaAs HJ-FET  
NE651R479A  
FEATURES  
OUTLINE DIMENSIONS (Units in mm)  
• LOW COST PLASTIC SURFACE MOUNT PACKAGE  
Available on Tape and Reel  
PACKAGE OUTLINE 79A  
• USABLE TO 3.7 GHz:  
Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,  
PCS  
1.5 ± 0.2  
4.2 Max  
Source  
• HIGH OUTPUT POWER:  
30 dBm TYP with 5.0 V Vdc  
27 dBm TYP with 3.5 V Vdc  
Source  
Drain  
Gate  
Drain  
Gate  
• HIGH LINEAR GAIN:  
12 dB TYP at 1.9 GHz  
• LOW THERMAL RESISTANCE:  
30°C/W  
0.4 ± 0.15  
5.7 Max  
0.8 Max  
3.6 ± 0.2  
DESCRIPTION  
(Bottom View)  
NEC's NE651R479A is a GaAs HJ-FET designed for medium  
power mobile communications, Fixed Wireless Access, ISM,  
WLL, PCS, IMT-2000, and MMDS transmitter and subscriber  
applications. It is capable of delivering 0.5 Watts of output  
power (CW) at 3.5 V, and 1 Watt of output power (CW) at 5 V  
with high linear gain, high efficiency, and excellent linearity.  
Reliability and performance uniformity are assured by NEC's  
stringent quality and control procedures.  
TYPICAL 5 V RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC = 25°C)  
SYMBOLS  
POUT  
GL  
CHARACTERISTICS  
UNITS  
dBm  
dB  
MIN  
TYP  
29.5  
12.0  
58  
MAX  
TEST CONDITIONS  
Output Power  
f = 1.9 GHz, VDS = 5 V  
PIN = +15 dBm, RG = 1 k Ω,  
IDSQ = 50 mA (RF OFF)  
Linear Gain1  
ηADD  
ID  
Power Added Efficiency  
Drain Current  
%
mA  
350  
Note:  
1. PIN = 0 dBm.  
ELECTRICAL CHARACTERISTICS (TC = 25°C)  
PART NUMBER  
NE651R479A  
PACKAGE OUTLINE  
79A  
TYP  
27.0  
12.0  
60  
SYMBOLS  
POUT  
GL  
CHARACTERISTICS  
Output Power  
UNITS  
dBm  
dB  
MIN  
MAX  
TEST CONDITIONS  
f = 1.9 GHz, VDS =3.5 V  
PIN = +15 dBm, RG = 1 k Ω,  
IDSQ = 50 mA (RF OFF)2  
26.0  
Linear Gain1  
ηADD  
ID  
Power Added Efficiency  
Drain Current  
%
52  
mA  
A
220  
0.7  
IDSS  
Saturated Drain Current  
Pinch-Off Voltage  
VDS = 2.5 V, VGS = 0 V  
VDS = 2.5 V, ID = 14 mA  
IGD = 14 mA  
VP  
V
-2.0  
12  
-0.4  
50  
BVGD  
RTH  
Gate to Drain Break Down Voltage  
Thermal Resistance, Channel to Case  
V
°C/W  
30  
Notes:  
1. PIN = 0 dBm.  
2. DC performance is 100% tested. Wafers are sample tested for RF performance.  
Wafer rejection criteria for standard devices is 1 reject for sample lot.  
California Eastern Laboratories  
1234567...11

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