NE6510179

更新时间： 2024-11-13 22:29:07

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
10页	287K
描述
NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NE6510179 数据手册

NEC's 3W, L&S-BAND

MEDIUM POWER GaAs HJ-FET

NE6510179A

FEATURES

OUTLINE DIMENSIONS (Units in mm)

• LOW COST PLASTIC SURFACE MOUNT PACKAGE

Available on Tape and Reel

PACKAGE OUTLINE 79A

1.5 – 0.2

4.2 MAX

• USABLE TO 3.7 GHz:

Source

Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,

PCS

Source

Drain

Gate

• HIGH OUTPUT POWER:

35 dBm TYP with 5.0 V Vdc

32.5 dBm TYP with 3.5 V Vdc

• HIGH LINEAR GAIN:

10 dB TYP at 1.9 GHz

0.4 – 0.15

5.7 MAX

0.8 MAX

3.6 – 0.2

• LOW THERMAL RESISTANCE:

5°C/W

BOTTOM VIEW

DESCRIPTION

Note: Unless otherwise specified, tolerance is ±0.2 mm

NEC's NE6510179A is a GaAs HJ-FET designed for medium

power mobile communications, Fixed Wireless Access, ISM,

WLL, PCS, IMT-2000, and MMDS transmitter and subscriber

applications. It is capable of delivering 1.8 watts of output

power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5 V

with high linear gain, high efficiency, and excellent linearity.

Reliability and performance uniformity are assured by NEC's

stringent quality and control procedures.

ELECTRICAL CHARACTERISTICS (TC = 25°C)

PART NUMBER

NE6510179A

79A

PACKAGE OUTLINE

SYMBOLS

POUT

CHARACTERISTICS

UNITS

dBm

MIN

TYP

32.5

10.0

MAX

TEST CONDITIONS

Output Power

Linear Gain¹

31.5

f = 1900 MHz, VDS = 3.5 V,

Pin = +25 dBm, Rg = 100 Ω

IDSQ = 200 mA (RF OFF)²

ηADD

Power Added Efficiency

Drain Current

0.72

IDSS

Saturated Drain Current

Pinch-Off Voltage

2.4

VDS = 2.5 V; VGS = 0 V

VDS = 2.5 V; ID = 14 mA

-2.0

-0.4

RTH

Thermal Resistance

°C/W

Channel to Case

IGD = 14 mA

BVGD

Gate to Drain Breakdown Voltage

Notes:

1. Pin = 0 dBm

2. DC performance is tested 100% . Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1

reject for several samples.

California Eastern Laboratories

12 3 4 5 6 7...10

中文翻译

下载PDF

与NE6510179相关器件

型号	品牌	获取价格	描述	数据表
NE6510179A	CEL	获取价格	NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
NE6510179A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-j
NE6510179A-A	CEL	获取价格	NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
NE6510179A-T1	CEL	获取价格	NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
NE6510179A-T1-A	CEL	获取价格	NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
NE6510179A-TI	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction
NE6510379A	NEC	获取价格	3 W L-BAND POWER GaAs HJ-FET
NE6510379A-A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-j
NE6510379A-T1	NEC	获取价格	3 W L-BAND POWER GaAs HJ-FET
NE6510379A-T1-A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-j