Datasheet > NE6510379A-T1-A

NE6510379A-T1-A

更新时间： 2024-11-14 20:52:27

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
8页	65K
描述
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN

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中文翻译

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NE6510379A-T1-A 数据手册

PRELIMINARY DATA SHEET

N-CHANNEL GaAs HJ-FET

NE6510379A

3 W L-BAND POWER GaAs HJ-FET

DESCRIPTION

The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile

communication systems. It is capable of delivering 3 W of output power with high linear gain, high efficiency and

excellent distortion.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

• GaAs HJ-FET Structure

• High Output Power : P^O= +35 dBm typ. @V^DS= 3.5 V, I^Dset= 200 mA, f = 900 MHz, Pin = +24 dBm, 1/duty

P^O= +32.5 dBm typ. @V^DS= 3.5 V, I^Dset= 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty

• High Linear Gain : G^L= 13 dB typ. @V^DS= 3.5 V, I^Dset= 200 mA, f = 900 MHz, Pin = 0 dBm, 1/3 duty

G^L= 8 dB typ. @V^DS= 3.5 V, I^Dset= 200 mA, f = 1.9 GHz, Pin = 0 dBm, 1/3 duty

• High Power Added Efficiency : 58% typ. @V^DS= 3.5 V, I^Dset= 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty

52% typ. @V^DS= 3.5 V, I^Dset= 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty

ORDERING INFORMATION

Part Number

Package

Supplying Form

NE6510379A-T1

79A

12 mm tape width, 1 kpcs/reel

Remark To order evaluation samples, please contact your nearby sales office.

Part number for sample order: NE6510379A

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

V^DS

V^GSO

I^D

Ratings

Unit

–4

4.2

Gate Forward Current

Gate Reverse Current

Total Power Dissipation

Channel Temperature

Storage Temperature

I^GF

I^GR

P^T

T^ch

150

°C

T^stg

–65 to +150

Caution Please handle this device at static-free workstation, because this is an electrostatic

sensitive device.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

The mark ! shows major revised points.

Document No. PG10023EJ01V0DS (1st edition)

(Previous No. P13677EJ1V0DS00)

Date Published November 2001 CP(K)

Printed in Japan

NEC Corporation 1998

NEC Compound Semiconductor Devices 2001

12 3 4 5 6 7 8

中文翻译

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与NE6510379A-T1-A相关器件

型号	品牌	获取价格	描述	数据表
NE651R479A	CEL	获取价格	MEDIUM POWER GaAs HJ-FET
NE651R479A	NEC	获取价格	0.4 W L-BAND POWER GaAs HJ-FET
NE651R479A-A	CEL	获取价格	MEDIUM POWER GaAs HJ-FET
NE651R479A-T1	NEC	获取价格	0.4 W L-BAND POWER GaAs HJ-FET
NE651R479A-T1-A	CEL	获取价格	MEDIUM POWER GaAs HJ-FET
NE661M04	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE661M04	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-
NE661M04-T2	NEC	获取价格	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-
NE661M04-T2-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
NE661M04-T2-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,3.3V V(BR)CEO,12MA I(C),SOT-343VAR

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