Datasheet > NE6500496_00

NE6500496_00

更新时间： 2024-09-24 03:46:43

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
2页	33K
描述
L&S BAND MEDIUM POWER GaAs MESFET

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NE6500496_00 数据手册

L&S BAND MEDIUM POWER GaAs MESFET NE6500496

ABSOLUTE MAXIMUM RATINGS

FEATURES

(TC= 25 °C unless otherwise noted)

• HIGH OUTPUT POWER: 4 W

• HIGH LINEAR GAIN: 11.5 dB

• HIGH EFFICIENCY (PAE): 45%

• INDUSTRY STANDARD PACKAGING

SYMBOLS

VDSX

VGDX

VGSX

IDS

PARAMETERS

Drain to Source Voltage

Gate to Drain Voltage

Gate to Source Voltage

Drain Current

UNITS

RATINGS

-18

-12

4.5

IGS

Gate Current

Total Power Dissipation

Channel Temperature

Storage Temperature

DESCRIPTION

TCH

°C

175

TSTG

-65 to +175

The NE6500496 is a medium power GaAs MESFET designed

for up to a 4 W output stage or as a driver for high power

devices. The device has no internal matching and can be used

from UHF frequencies up to 3.0 GHz. The chips used in this

series offer superior reliability and consistent performance for

which NEC microwave semiconductors are known.

OUTLINE DIMENSIONS (Units in mm)

PACKAGE OUTLINE 96

5.2±0.3

1.0±0.1

The NE6500496 Transistors are manufactured to NEC's strin-

gent quality assurance standards to ensure highest reliability

and consistent superior performance.

4.0 MIN BOTH LEADS

Gate

φ2.2±0.2

4.3±0.2

4.0±0.1

RECOMMENDED OPERATING LIMITS

Source

SYMBOLS

PARAMETERS

Drain to Source Voltage

Channel Temperature

Gain Compression

Gate Resistance

UNITS MIN TYP MAX

Drain

VDS

°C

Ω

130

3.0

TCH

0.6±0.1

5.2±0.3

11.0±0.15

15.0±0.3

GCOMP

+.06

-.02

200

0.1

0.2 MAX

5.0 MAX

1.7±0.15

6.0±0.2

1.2

ELECTRICAL CHARACTERISTICS (TC = 25°C)

PART NUMBER

NE6500496

TYP

SYMBOLS

CHARACTERISTICS

UNITS

MIN

MAX

TEST CONDITIONS

POUT

Power Out at Fixed Input Power

dBm

35.5

36.0

11.5

PIN = 26.0 dBm

ηADD

IDS

Linear Gain

11.0

VDS = 10 V; IDSQ = 400 mA

Power Added Efficiency

Drain Source Current

Saturated Drain Current

Pinch-off Voltage

f = 2.3 GHz; RG = 200 Ω

0.8

IDSS

1.0

2.3

3.5

VDS = 2.5 V; VGS = 0 V

VDS = 2.5 V; IDS = 15 mA

VDS = 2.5 V; IDS = 1 mA

Channel to Case

-3.5

-2.0

1300

5.0

-0.5

Transconductance

Thermal Resistance

°C/W

RTH

6.0

California Eastern Laboratories

中文翻译

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