NE650R279A-A

更新时间： 2024-09-24 13:11:59

品牌	Logo	应用领域
日电电子 - NEC		晶体射频场效应晶体管放大器
页数	文件大小	规格书
8页	79K
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数据手册

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NE650R279A-A 数据手册

PRELIMINARY DATA SHEET

N-CHANNEL GaAs MES FET

NE650R279A

0.2 W L, S-BAND POWER GaAs MES FET

DESCRIPTION

The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile

communication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) with high

linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

•

High Output Power

High Linear Gain

: P^{O (1 dB)}= +23 dBm typ.

: 16 dB typ.

High Power Added Efficiency: 45% typ. @V^DS= 6 V, I^Dset= 50 mA, f = 1.9 GHz

ORDERING INFORMATION (PLAN)

Part Number

Package

Supplying Form

NE650R279A-T1

79A

12 mm tape width, 1 kpcs/reel

Remark To order evaluation samples, please contact your local NEC sales office.

(Part number for sample order: NE650R279A)

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

V^DS

V^GSO

I^D

Ratings

Unit

–7

0.3

Gate Forward Current

Gate Reverse Current

Total Power Dissipation

Channel Temperature

Storage Temperature

I^GF

I^GR

2.1

P^T

T^ch

150

°C

T^stg

–65 to +150

Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive

device.

The information in this document is subject to change without notice.

Document No. P13678EJ1V0DS00 (1st edition)

Date Published August 1998 N CP(K)

Printed in Japan

1998

12 3 4 5 6 7 8

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