Datasheet > NE650103M

NE650103M

更新时间： 2024-11-14 03:46:43

品牌	Logo	应用领域
CEL		晶体晶体管局域网
页数	文件大小	规格书
7页	223K
描述
10 W L & S-BAND POWER GaAs MESFET

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数据手册

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NE650103M 数据手册

NEC'S 10 W L & S-BAND

POWER GaAs MESFET

NE650103M

FEATURES

OUTLINE DIMENSIONS (Units in mm)

• LOW COST PLASTIC PACKAGE

PACKAGE OUTLINE 3M

• USABLE TO 2.7 GHz:

PCS, W-CDMA, WLL, Satellite Uplink, BWA

20.32 0.ꢀ1

ꢀ4.27 0.ꢀ1

• HIGH OUTPUT POWER:

40 dBm TYP

• HIGH POWER ADDED EFFICIENCY:

45 % TYP at 2.3 GHz

3.1 0.2

GATE

• LOW THERMAL RESISTANCE:

4.0° C/W

2-φ 3.3 0.3

• LEAD-FREE

DESCRIPTION

SOURCE

DRAIN

8.14 0.2

NEC's NE650103M is a 10 W GaAs MESFET designed for

PCS, W-CDMA, WLL transmitter applications. It is capable of

delivering 10 Watts of output power with high linear gain, high

efficiency and excellent linearity. Reliability and performance

uniformity are assured by NEC's stringent quality and control

procedures

0.ꢀ1 0.01

2.04 0.3

ELECTRICAL CHARACTERISTICS (TC = 25°C)

PART NUMBER

NE650103M

PACKAGE OUTLINE

SYMBOLS

CHARACTERISTICS

UNITS

MIN

TYP

MAX

TEST CONDITIONS

P1dB

Power Out at 1dB Gain Compression

dBm

39.0

40.0

f = 2.3 GHz, VDS = 10.0 V

Rg = 100 Ω

IDSQ ≤ 1.5 A (RF OFF)

ηADD

IDSS

Linear Gain (at Pin ≤ 23 dBm)

Power Added Efficiency

Saturated Drain Current

Pinch-Off Voltage

10.0

11.0

2.0

5.0

7.0

VDS = 2.5 V; VGS = 0 V

VDS = 2.5 V; IDS = 23 mA

-4.0

-2.5

-1.0

RTH

Thermal Resistance

°C/W

4.0

4.5

Channel to Case

California Eastern Laboratories

12 3 4 5 6 7

中文翻译

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