Datasheet > NE6501077_00

NE6501077_00

更新时间： 2024-11-14 03:46:43

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
2页	32K
描述
L/S BAND MEDIUM POWER GaAs MESFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NE6501077_00 数据手册

L/S BAND MEDIUM POWER GaAs MESFET

NE6501077

ABSOLUTE MAXIMUM RATINGS

FEATURES

(TC = 25 °C unless otherwise noted)

• HIGH OUTPUT POWER: 10 W

• HIGH LINEAR GAIN: 10.5 dB

• HIGH EFFICIENCY: 40%

SYMBOLS

VDSX

VGDX

VGSX

IDS

PARAMETERS

Drain to Source Voltage

Gate to Drain Voltage

Gate to Source Voltage

Drain Current

UNITS

RATINGS

-18

-12

• INDUSTRY STANDARD PACKAGING

9.0

IGS

Gate Current

Total Power Dissipation

Channel Temperature

Storage Temperature

DESCRIPTION

TCH

°C

175

TSTG

-65 to +175

TheNE6501077isamediumpowerGaAsMESFETdesigned

for up to a 10 W output stage or as a driver for high power

devices. Thedevicehasnointernalmatchingandcanbeused

from UHF frequencies up to 3.0 GHz. The chips used in this

series offer superior reliability and consistent performance for

which NEC microwave semiconductors are known.

OUTLINE DIMENSIONS (Units in mm)

PACKAGE OUTLINE 77

The NE6501077 transistors are manufactured to NEC's strin-

gent quality assurance standards to ensure highest reliability

and consistent superior performance.

17.5±0.5

14.3

1.0 ± 0.1

GATE

SOURCE

2.5

6.35±0.4

RECOMMENDED OPERATING LIMITS

SYMBOLS

PARAMETERS

Drain to Source Voltage

Channel Temperature

Gain Compression

Gate Resistance

UNITS MIN TYP MAX

R1.25, 2 PLACES

+0.06

VDS

°C

Ω

130

3.0

4.0 MIN BOTH

LEADS

DRAIN

TCH

8.9±0.4

GCOMP

0.1

-0.02

100

3.8 MAX

1.0

2.26 ±0.4

0.2 MAX

ELECTRICAL CHARACTERISTICS (TC = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE6501077

SYMBOLS

CHARACTERISTICS

UNITS

MIN

TYP

MAX

TEST CONDITIONS

POUT

Power Out at Fixed Input Power

dBm

39.0

39.5

PIN = 31.0 dBm

ηADD

IDS

Linear Gain

9.5

10.5

f = 2.3 GHz

VDS = 10 V; IDSQ = 1A

RG = 100Ω

Power Added Efficiency

Drain Source Current

Saturated Drain Current

Pinch-off Voltage

2.0

IDSS

2.0

4.5

7.0

VDS = 2.5 V; VGS = 0 V

VDS = 2.5 V; IDS = 15 mA

VDS = 2.5 V; IDS = 2 A

Channel to Case

-3.5

-2.0

2600

2.5

-0.5

Transconductance

Thermal Resistance

°C/W

RTH

3.0

California Eastern Laboratories

中文翻译

下载PDF

与NE6501077_00相关器件

型号	品牌	获取价格	描述	数据表
NE6501077-A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Se
NE650N	PHILIPS	获取价格	Dolby Noise Reduction IC, PDIP16,
NE650N-A	PHILIPS	获取价格	Dolby Noise Reduction IC, PDIP16
NE650N-B	PHILIPS	获取价格	Dolby Noise Reduction IC, PDIP16
NE650NSIIA	PHILIPS	获取价格	Dolby Noise Reduction IC, PDIP16
NE650NSIIB	PHILIPS	获取价格	Dolby Noise Reduction IC, PDIP16
NE650R279A	NEC	获取价格	0.2 W L, S-BAND POWER GaAs MES FET
NE650R279A-A	NEC	获取价格	暂无描述
NE650R279A-T1	NEC	获取价格	0.2 W L, S-BAND POWER GaAs MES FET
NE650R279A-T1-A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Se