NE6500379A-T1

更新时间： 2024-11-14 03:46:43

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
7页	162K
描述
3W, L/S-BAND MEDIUM POWER GaAs MESFET

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NE6500379A-T1 数据手册

NEC'S 3W, L/S-BAND

MEDIUM POWER GaAs MESFET

NE6500379A

FEATURES

OUTLINE DIMENSIONS (Units in mm)

• LOW COST PLASTIC SURFACE MOUNT PACKAGE

Available on Tape and Reel

PACKAGE OUTLINE 79A

1.5 – 0.2

4.2 MAX

• USABLE TO 2.7 GHz:

Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,

PCS

Source

Drain

Gate

• HIGH OUTPUT POWER:

35 dBm TYP

• HIGH LINEAR GAIN:

10 dB TYP at 1.9 GHz

0.4 – 0.15

5.7 MAX

• LOW THERMAL RESISTANCE:

5 C/W

0.8 MAX

3.6 – 0.2

BOTTOM VIEW

DESCRIPTION

NEC's NE6500379A is a 3 W GaAs MESFET designed for

medium power Fixed Wireless Access, ISM, WLL, PCS, IMT-

2000, and return path MMDS transmitter applications. It is

capable of delivering 3 Watts of output power with high linear

gain, high efficiency and excellent linearity. Reliability and

performance uniformity are assured by NEC's stringent qual-

ity and control procedures

Note: Unless otherwise specified, tolerance is ±0.2 mm

ELECTRICAL CHARACTERISTICS (TC = 25°C)

PART NUMBER

NE6500379A

79A

PACKAGE OUTLINE

SYMBOLS

CHARACTERISTICS

UNITS

MIN

TYP

MAX

TEST CONDITIONS

P1dB

Power Out at 1dB Gain Compression

dBm

35.0

f = 1.9 GHz, VDS = 6.0 V

Rg = 30 Ω

ηADD

Linear Gain¹

9.0

10.0

IDSQ = 500 mA (RF OFF)²

Power Added Efficiency

Drain Current

1.0

4.5

-2.6

IDSS

Saturated Drain Current

Pinch-Off Voltage

VDS = 2.5 V; VGS = 0 V

VDS = 2.5 V; IDS = 21 mA

-3.6

-1.6

RTH

Thermal Resistance

°C/W

Channel to Case

IGD = 21 mA

BVGD

Gate-to-Drain Breakdown Voltage

Notes:

1. Pin = 0 dBm

2. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1

reject for several samples.

California Eastern Laboratories

12 3 4 5 6 7

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