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NE6500379A-T1

更新时间： 2024-02-17 16:46:32

品牌	Logo	应用领域
日电电子 - NEC		晶体射频场效应晶体管
页数	文件大小	规格书
8页	90K
描述
3W L, S-BAND POWER GaAs MESFET

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中文翻译

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技术参数
数据手册

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NE6500379A-T1 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	79A, 4 PIN	Reach Compliance Code：	compliant
风险等级：	5.65	外壳连接：	DRAIN
配置：	SINGLE	最小漏源击穿电压：	15 V
最大漏极电流 (ID)：	1 A	FET 技术：	METAL SEMICONDUCTOR
最高频带：	S BAND	JESD-30 代码：	R-PQMW-F4
湿度敏感等级：	1	元件数量：	1
端子数量：	4	工作模式：	DEPLETION MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	MICROWAVE	峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	QUAD	处于峰值回流温度下的最长时间：	10
晶体管应用：	AMPLIFIER	晶体管元件材料：	GALLIUM ARSENIDE
Base Number Matches：	1

NE6500379A-T1 数据手册

DATA SHEET

N-CHANNEL GaAs MES FET

NE6500379A

3W L, S-BAND POWER GaAs MESFET

DESCRIPTION

The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile

communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high

linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s

stringent quality and control procedures.

FEATURES

•

High Output Power

High Linear Gain

: P^{o (1dB)}= +35 dBm typ.

: 10 dB typ.

High Power Added Efficiency: 50% typ. @V^DS= 6 V, I^Dset= 500 mA, f = 1.9 GHz

ORDERING INFORMATION

Part Number

Package

Supplying Form

NE6500379A-T1

79A

12 mm tape width, 1 kpcs/reel

Remark To order evaluation samples, please contact your local NEC sales office.

(Part number for sample order: NE6500379A)

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

V^DS

V^GSO

I^D

Ratings

Unit

–7

5.6

Gate Current

I^G

Total Power Dissipation

Channel Temperature

Storage Temperature

P^T

T^ch

150

°C

T^stg

–65 to +150

Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive

device.

The information in this document is subject to change without notice.

Document No. P13495EJ2V0DS00 (2nd edition)

Date Published August 1998 N CP(K)

Printed in Japan

The mark shows major revised points.

1998

12 3 4 5 6 7 8

中文翻译

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