Datasheet > MT3S15TU(TE85L)

MT3S15TU(TE85L)

更新时间： 2024-09-15 19:45:07

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	200K
描述
MT3S15TU(TE85L)

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中文翻译

获取价格

技术参数
数据手册

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MT3S15TU(TE85L) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
最大集电极电流 (IC)：	0.08 A	配置：	Single
最小直流电流增益 (hFE)：	100	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.9 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	9500 MHz	Base Number Matches：	1

MT3S15TU(TE85L) 数据手册

MT3S15TU

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

MT3S15TU

VHF-UHF Low-Noise, Low-Distortion Amplifier Application

Unit: mm

2.1±0.1

1.7±0.1

Features

•

Low-Noise Figure: NF=1.6 dB (typ.) (@ f=1 GHz)

High Gain: |S |²=13.5 dB (typ.) (@ f=1 GHz)

21e

Marking

1. BASE

2. EMITTER

3. COLLECTOR

T 3

UFM

JEDEC

JEITA

⎯

TOSHIBA

2-2U1B

Weight: 6.6 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-basevoltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector-current

°C

Base-current

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

900

150

stg

−55 to 150

Note 1: The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t))

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Start of commercial production

2007-06

2014-03-01

12 3 4 5

中文翻译

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