MT3S20P

更新时间： 2024-09-15 12:23:07

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
5页	185K
描述
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications

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中文翻译

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MT3S20P 数据手册

MT3S20P

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

MT3S20P

VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications

Unit: mm

FEATURES

•

Low Noise Figure: NF=1.45dB(Typ.) (@f=1GHz)

High Gain: |S21e|²=11dB(Typ.) (@f=1GHz)

Marking

M U

PW-Mini

JEDEC

JEITA

SC-62

2-5K1A

TOSHIBA

Absolute Maximum Ratings (Ta = 25°C)

Weight: 0.05 g (Typ.)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

1.5

Base current

Collector power dissipation

Junction temperature

Storage temperature range

400

P (Note1)

1.8

150

°C

stg

−55 to 150

Note.1 : The device is mounted on a ceramic board (25mm X 25mm X 0.8 mm (t))

Note.2 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-12-01

12 3 4 5

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