Datasheet > MT3S35T_07

MT3S35T_07

更新时间： 2024-09-15 04:14:19

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
4页	126K
描述
UHF LOW NOISE AMPLIFIER APPLICATION

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中文翻译

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数据手册

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MT3S35T_07 数据手册

MT3S35T

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE

MT3S35T

VCO OSCILLETOR STAGE

Unit: mm

UHF LOW NOISE AMPLIFIER APPLICATION

FEATURES

•

Low Noise Figure :NF=1.4dB (@f=2GHz)

High Gain:|S21e|²=13.0dB (@f=2GHz)

Marking

Q 2

TESM

JEDEC

―

Absolute Maximum Ratings (Ta = 25°C)

JEITA

TOSHIBA

2-1B1A

Characteristics

Collector-Base voltage

Symbol

Rating

Unit

Weight:0.0022g (typ.)

CBO

CEO

EBO

4.5

Collector-Emitter voltage

Emitter-Base voltage

Collector-Current

1.5

°C

Base-Current

Collector Power dissipation

Junction temperature

Storage temperature Range

100

150

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4

中文翻译

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