Datasheet > MT3S38T

MT3S38T

更新时间： 2024-02-26 11:37:46

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管局域网
页数	文件大小	规格书
4页	122K
描述
TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE

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数据手册

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MT3S38T 数据手册

MT3S38T

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE

MT3S38T

VCO OSCILLETOR STAGE

UHF LOW NOISE AMPLIFIER APPLICATION

Unit: mm

FEATURES

Low Noise Figure :NF=1.2dB (@f=2GHz)

High Gain:|S21e|²=11dB (@f=2GHz)

Marking

Q 5

TESM

JEDEC

―

Maximum Ratings (Ta = 25°C)

JEITA

Characteristics

Symbol

Rating

Unit

TOSHIBA

2-1B1A

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector-Current

4.5

CBO

CEO

EBO

Weight:0.0022g (typ.)

1.5ꢀ

°C

Base-Current

Collector Power dissipation

Junction temperature

Storage temperature Range

100

150

−55~150

stg

2002-08-19

12 3 4

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