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MT3S45T PDF预览

MT3S45T

更新时间: 2024-11-20 10:44:19
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体放大器小信号双极晶体管射频小信号双极晶体管光电二极管
页数 文件大小 规格书
4页 121K
描述
VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION

MT3S45T 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.82
Is Samacsys:N其他特性:LOW NOISE
外壳连接:COLLECTOR最大集电极电流 (IC):0.03 A
基于收集器的最大容量:1.1 pF集电极-发射极最大电压:4.5 V
配置:SINGLE最小直流电流增益 (hFE):70
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-F3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):0.1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):18000 MHz
Base Number Matches:1

MT3S45T 数据手册

 浏览型号MT3S45T的Datasheet PDF文件第2页浏览型号MT3S45T的Datasheet PDF文件第3页浏览型号MT3S45T的Datasheet PDF文件第4页 
MT3S45T  
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE  
MT3S45T  
VCO OSCILLETOR STAGE  
UHF LOW NOISE AMPLIFIER APPLICATION  
Unit: mm  
FEATURES  
·
·
Low Noise Figure :NF=1.1dB (@f=2GHz)  
High Gain:|S21e|2=12.0dB (@f=2GHz)  
Marking  
3
R 4  
1
2
TESM  
JEDEC  
Maximum Ratings (Ta = 25°C)  
JEITA  
Characteristics  
Symbol  
Rating  
Unit  
TOSHIBA  
2-1B1A  
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-Base voltage  
Collector-Current  
V
V
V
8
4.5  
V
V
CBO  
CEO  
EBO  
Weight:0.0022g (typ.)  
1.5  
V
I
30  
mA  
mA  
mW  
°C  
°C  
C
Base-Current  
I
15  
B
Collector Power dissipation  
Junction temperature  
Storage temperature Range  
P
100  
C
T
150  
j
T
55~150  
stg  
1
2002-11-13  

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