Datasheet > MT3S41FS_07

MT3S41FS_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
4页	122K
描述
UHF Low-Noise Amplifier Application

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数据手册

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MT3S41FS_07 数据手册

MT3S41FS

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

MT3S41FS

VCO Oscillator Stage

Unit: mm

UHF Low-Noise Amplifier Application

1.0±0.05

0.8±0.05

FEATURES

•

Low-Noise Figure: NF = 1.2 dB (@f= 2 GHz)

High Gain: |S21e|²= 10.0 dB (@ f = 2 GHz)

0.1±0.05

Marking

2 6

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

1.BASE

2.EMITTER

3.COLLECTOR

CBO

CEO

EBO

4.5

Collector-emitter voltage

Emitter-base voltage

Collector-current

fSM

1.5

JEDEC

JEITA

°C

Base-current

TOSHIBA

2-1E1A

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

100

150

−55~150

Weight: 0.0006 g (typ.)

stg

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Device mounted on a glass-epoxy PCB (1.0 cm²x 0.8 mm (t))

2007-11-01

12 3 4

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