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MT3S36FS PDF预览

MT3S36FS

更新时间: 2024-09-15 04:14:19
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体放大器小信号双极晶体管射频小信号双极晶体管光电二极管
页数 文件大小 规格书
4页 121K
描述
UHF Low-Noise Amplifier Application

MT3S36FS 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
风险等级:5.78Is Samacsys:N
其他特性:LOW NOISE外壳连接:COLLECTOR
最大集电极电流 (IC):0.036 A基于收集器的最大容量:0.6 pF
集电极-发射极最大电压:4.5 V配置:SINGLE
最小直流电流增益 (hFE):70最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):19000 MHzBase Number Matches:1

MT3S36FS 数据手册

 浏览型号MT3S36FS的Datasheet PDF文件第2页浏览型号MT3S36FS的Datasheet PDF文件第3页浏览型号MT3S36FS的Datasheet PDF文件第4页 
MT3S36FS  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type  
MT3S36FS  
VCO Oscillator Stage  
Unit: mm  
UHF Low-Noise Amplifier Application  
1.0±0.05  
0.8±0.05  
FEATURES  
Low-Noise Figure: NF = 1.3 dB (@ f = 2 GHz)  
High Gain: |S21e|2 = 12.5 dB (@ f = 2 GHz)  
1
2
3
0.1±0.05  
0.1±0.05  
Marking  
2
1
3
2 1  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
1.BASE  
2.EMITTER  
3.COLLECTOR  
V
CBO  
V
CEO  
V
EBO  
8
4.5  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector-current  
fSM  
1.5  
V
JEDEC  
JEITA  
-
I
36  
mA  
mA  
mW  
°C  
°C  
C
-
Base-current  
I
18  
B
TOSHIBA  
2-1E1A  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
100  
150  
55~150  
Weight: 0.0006 g (typ.)  
C
T
j
T
stg  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Device mounted on a glass-epoxy PCB (1.0 cm2 x 0.8 mm (t))  
1
2007-11-01  

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