Datasheet > MT3S22P(TE12L,F)

MT3S22P(TE12L,F)

更新时间： 2024-09-15 21:20:27

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	189K
描述
TRANSISTOR,BJT,NPN,6V V(BR)CEO,80MA I(C),SC-62

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中文翻译

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技术参数
数据手册

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MT3S22P(TE12L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.61	最大集电极电流 (IC)：	0.08 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	1.8 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	6500 MHz
Base Number Matches：	1

MT3S22P(TE12L,F) 数据手册

MT3S22P

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

MT3S22P

VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications

Unit: mm

FEATURES

•

Low Noise Figure: NF=1.5dB(Typ.) (@f=1GHz)

High Gain: |S21e|²=10.5dB(Typ.) (@f=1GHz)

Marking

T 5

PW-Mini

JEDEC

JEITA

SC-62

2-5K1A

TOSHIBA

Absolute Maximum Ratings (Ta = 25°C)

Weight: 0.05 g (Typ.)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector-current

Base-current

Collector power dissipation

Junction temperature

Storage temperature range

400

P (Note1)

1.8

150

°C

stg

−55 to 150

Note.1: The device is mounted on a ceramic board (25mm × 25mm × 0.8 mm (t))

Note.2 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-12-10

12 3 4 5

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