Datasheet > MT3S19(TE85L)

MT3S19(TE85L)

更新时间： 2024-01-10 16:43:42

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	171K
描述
TRANSISTOR,BJT,NPN,6V V(BR)CEO,80MA I(C),TO-236AB

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技术参数
数据手册

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MT3S19(TE85L) 技术参数

是否Rohs认证：	不符合	生命周期：	Lifetime Buy
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	最大集电极电流 (IC)：	0.08 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.8 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	10000 MHz
Base Number Matches：	1

MT3S19(TE85L) 数据手册

MT3S19

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

MT3S19

VHF-UHF Low-Noise, Low-Distortion Amplifier Applications

Unit: mm

Features

•

Low-Noise Figure:NF=1.5 dB (typ.) (@ f=1 GHz)

High Gain:|S21e|²=12.5 dB (typ.) (@ f=1 GHz)

Marking

1. Base

2. Emitter

3. Collector

T 6

S-Mini

JEDEC

JEITA

TO-236

SC-59

TOSHIBA

2-3F1A

Absolute Maximum Ratings (Ta = 25°C)

Weight: 0.012 g (typ.)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector-current

Base-current

Collector power dissipation

180

800

C(Note 1)

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

Note 1: The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t))

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-03-31

12 3 4 5

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