MT3S19R

更新时间： 2024-09-13 12:23:07

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
5页	168K
描述
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications

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中文翻译

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MT3S19R 数据手册

MT3S19R

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

MT3S19R

VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications

Unit: mm

+0.08

-0.05

0.42

+0.08

-0.07

0.17

0.05ꢀM A

FEATURES

•

Low Noise Figure:NF=1.5dB(Typ.) (@ f=1GHz)

High Gain:|S21e|²=13dB(Typ.) (@ f=1GHz)

0.95

2.9±0.2

Marking

T 6

1. Base

2. Emitter

3. Collector

SOT23F

JEDEC

－

Absolute Maximum Ratings (Ta = 25°C)

JEITA

－

TOSHIBA

Weight: 11 mg (typ.)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector-current

°C

Base-current

Collector power dissipation

Junction temperature

Storage temperature range

P (Note1)

320

150

stg

−55 to 150

Note 1: The device is mounted on a FR4 board (20 mm x 25 mm x 1.55 mm (t))

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-08-18

12 3 4 5

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