Datasheet > MT3S19R(TE85L)

MT3S19R(TE85L)

更新时间： 2024-11-29 14:38:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	161K
描述
TRANSISTOR,BJT,NPN,6V V(BR)CEO,80MA I(C),SOT-23VAR

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中文翻译

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技术参数
数据手册

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MT3S19R(TE85L) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	Is Samacsys：	N
最大集电极电流 (IC)：	0.08 A	配置：	Single
最小直流电流增益 (hFE)：	100	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.32 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	11500 MHz	Base Number Matches：	1

MT3S19R(TE85L) 数据手册

MT3S19R

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

MT3S19R

VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications

Unit: mm

+0.08

-0.05

0.42

+0.08

-0.07

0.17

0.05ꢀM A

FEATURES

•

Low Noise Figure:NF=1.5dB(Typ.) (@ f=1GHz)

High Gain:|S21e|²=13dB(Typ.) (@ f=1GHz)

0.95

2.9±0.2

Marking

T 6

1. Base

2. Emitter

3. Collector

SOT23F

JEDEC

－

Absolute Maximum Ratings (Ta = 25°C)

JEITA

－

TOSHIBA

Weight: 11 mg (typ.)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector-current

°C

Base-current

Collector power dissipation

Junction temperature

Storage temperature range

P (Note1)

320

150

stg

−55 to 150

Note 1: The device is mounted on a FR4 board (20 mm x 25 mm x 1.55 mm (t))

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-08-18

12 3 4 5

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