生命周期: | Lifetime Buy | 包装说明: | SMALL OUTLINE, R-PDSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.73 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.08 A |
基于收集器的最大容量: | 0.95 pF | 集电极-发射极最大电压: | 6 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 100 |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.9 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 11000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
MT3S19(TE85L) | TOSHIBA | TRANSISTOR,BJT,NPN,6V V(BR)CEO,80MA I(C),TO-236AB |
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MT3S19R | TOSHIBA | VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications |
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MT3S19R(TE85L) | TOSHIBA | TRANSISTOR,BJT,NPN,6V V(BR)CEO,80MA I(C),SOT-23VAR |
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MT3S19TU | TOSHIBA | VHF-UHF Low-Noise, Low-Distortion Amplifier Applications |
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MT3S20P | TOSHIBA | VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications |
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MT3S20P(TE12L,F) | TOSHIBA | TRANSISTOR,BJT,NPN,12V V(BR)CEO,80MA I(C),SOT-89 |
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