Datasheet > MMRF1006HSR5

MMRF1006HSR5

更新时间： 2024-11-19 02:52:35

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	754K
描述
RF Power Field Effect Transistors

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MMRF1006HSR5 数据手册

Document Number: MMRF1006H

Rev. 1, 11/2015

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

MMRF1006HR5

MMRF1006HSR5

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for pulse and CW wideband applications with frequencies up to

500 MHz. Devices are unmatched and are suitable for use in communications,

radar and industrial applications.

10--500 MHz, 1000 W, 50 V

LATERAL N--CHANNEL

BROADBAND

•

Typical Pulse Performance at 450 MHz: V_DD= 50 Vdc, I_DQ= 150 mA,

_out= 1000 W Peak (200 W Avg.), Pulse Width = 100 μsec,

Duty Cycle = 20%

Power Gain — 20 dB

Drain Efficiency — 64%

RF POWER MOSFETs

•

Capable of Handling 10:1 VSWR @ 50 Vdc, 450 MHz, 1000 W Peak

Power

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

CW Operation Capability with Adequate Cooling

Qualified Up to a Maximum of 50 V_DDOperation

Integrated ESD Protection

Designed for Push--Pull Operation

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

NI--1230H--4S

MMRF1006HR5

•

In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

NI--1230S--4S

MMRF1006HSR5

PARTS ARE PUSH--PULL

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

(Top View)

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +120

-- 6 , + 1 0

-- 65 to +150

150

Unit

Drain--Source Voltage

Vdc

°C

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

°C

(1)

225

°C

(2)

Total Device Dissipation @ T = 25°C, CW only

1333

1. Continuous use at maximum temperature will affect MTTF.

2. Refer to Fig. 12, Transient Thermal Impedance, for information to calculate value for pulsed operation.

MMRF1006HR5 MMRF1006HSR5

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...13

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