Datasheet > MMRF1007H

MMRF1007H

更新时间： 2024-11-02 01:12:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
17页	855K
描述
RF Power Field Effect Transistors

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MMRF1007H 数据手册

Document Number: MMRF1007H

Rev. 0, 12/2013

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MMRF1007HR5

MMRF1007HSR5

RF power transistors designed for applications operating at frequencies

from 900 to 1215 MHz. These devices are suitable for use in defense and

commercial pulse applications, such as IFF and DME.



Typical Pulse Performance: V_DD= 50 Vdc, I_DQ= 150 mA, P_out=

1000 W Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 sec, Duty

965--1215 MHz, 1000 W, 50 V

LATERAL N--CHANNEL

BROADBAND

Cycle = 10%

Power Gain — 20 dB

Drain Efficiency — 56%

RF POWER MOSFETs



Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 W Peak Power

Features



Characterized with Series Equivalent Large--Signal Impedance Parameters

Internally Matched for Ease of Use

Qualified Up to a Maximum of 50 V_DDOperation

Integrated ESD Protection

Designed for Push--Pull Operation

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

NI--1230H--4S

MMRF1007HR5



In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

NI--1230S--4S

MMRF1007HSR5

PARTS ARE PUSH--PULL

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

(Top View)

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +110

--6.0, +10

-- 65 to +150

150

Unit

Drain--Source Voltage

Vdc

C

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

C

(1)

225

C

1. Continuous use at maximum temperature will affect MTTF.

MMRF1007HR5 MMRF1007HSR5

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...17

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