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MMDF2C01HD PDF预览

MMDF2C01HD

更新时间： 2024-11-17 22:30:03
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
12页 374K
描述
COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS

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中文翻译

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MMDF2C01HD 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：unknown
风险等级：5.26其他特性：LOGIC LEVEL COMPATIBLE
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：4 A最大漏极电流 (ID)：5.2 A
最大漏源导通电阻：0.055 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL AND P-CHANNEL最大功率耗散 (Abs)：1.5 W
最大脉冲漏极电流 (IDM)：48 A认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MMDF2C01HD 数据手册

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Order this document  
by MMDF2C01HD/D  
SEMICONDUCTOR TECHNICAL DATA  
Medium Power Surface Mount Products  
Motorola Preferred Device  
COMPLEMENTARY  
DUAL TMOS POWER FET  
2.0 AMPERES  
MiniMOS devices are an advanced series of power MOSFETs  
which utilize Motorola’s High Cell Density HDTMOS process.  
12 VOLTS  
TheseminiaturesurfacemountMOSFETsfeatureultralowR  
DS(on)  
R
= 0.045 OHM  
DS(on)  
(N–CHANNEL)  
= 0.18 OHM  
and true logic level performance. They are capable of withstanding  
high energy in the avalanche and commutation modes and the  
drain–to–source diode has a very low reverse recovery time.  
MiniMOS devices are designed for use in low voltage, high speed  
switching applications where power efficiency is important. Typical  
applications are dc–dc converters, and power management in  
portable and battery powered products such as computers,  
printers, cellular and cordless phones. They can also be used for  
low voltage motor controls in mass storage products such as disk  
drives and tape drives.  
R
DS(on)  
(P–CHANNEL)  
D
N–Channel  
G
CASE 751–05, Style 14  
SO–8  
•
Ultra Low R  
Battery Life  
Provides Higher Efficiency and Extends  
DS(on)  
S
•
•
•
•
•
•
Logic Level Gate Drive — Can Be Driven by Logic ICs  
Miniature SO–8 Surface Mount Package — Saves Board Space  
Diode Is Characterized for Use In Bridge Circuits  
Diode Exhibits High Speed, With Soft Recovery  
D
P–Channel  
1
2
3
4
8
7
6
5
N–Drain  
N–Drain  
P–Drain  
P–Drain  
N–Source  
N–Gate  
I
Specified at Elevated Temperature  
DSS  
Mounting Information for SO–8 Package Provided  
P–Source  
P–Gate  
G
Top View  
S
(1)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
V
Value  
Unit  
Drain–to–Source Voltage  
N–Channel  
P–Channel  
20  
12  
Vdc  
DSS  
Gate–to–Source Voltage  
V
± 8.0  
Vdc  
A
GS  
Drain Current — Continuous  
N–Channel  
P–Channel  
N–Channel  
P–Channel  
I
5.2  
3.4  
48  
D
— Pulsed  
I
DM  
17  
Operating and Storage Temperature Range  
(2)  
T
J
and T  
stg  
–55 to 150  
2.0  
°C  
Watts  
°C/W  
°C  
Total Power Dissipation @ T = 25°C  
P
D
A
(2)  
Thermal Resistance — Junction to Ambient  
R
62.5  
θJA  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds.  
T
L
260  
DEVICE MARKING  
D2C01  
(1) Negative signs for P–Channel device omitted for clarity.  
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.  
ORDERING INFORMATION  
Device  
Reel Size  
Tape Width  
Quantity  
MMDF2C01HDR2  
13″  
12 mm embossed tape  
2500 units  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Thermal Clad is a trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 5  
Motorola, Inc. 1996  
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中文翻译

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MMDF2C01HD 替代型号

型号 品牌 替代类型 描述 数据表
FDS8928A ONSEMI

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FDS8928A FAIRCHILD

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MMDF2C01HDR2 ONSEMI

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MMDF2C01HDR2 MOTOROLA

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MMDF2C02E MOTOROLA

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 		COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS
MMDF2C02ER2 MOTOROLA

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 		2A, 20V, 0.2ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8
MMDF2C02HD MOTOROLA

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 		COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS
MMDF2C02HDR2 MOTOROLA

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 		Power Field-Effect Transistor, 3.8A I(D), 20V, 0.09ohm, 2-Element, N-Channel and P-Channel
MMDF2C03HD MOTOROLA

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 		COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS
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 		Power MOSFET 2 Amps, 30 Volts Complementary SO-8, Dual
MMDF2C03HDR1 MOTOROLA

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