是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.26 | 雪崩能效等级(Eas): | 324 mJ |
配置: | SEPARATE, 2 ELEMENTS | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 3 A | 最大漏极电流 (ID): | 2 A |
最大漏源导通电阻: | 0.09 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e0 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 最大功率耗散 (Abs): | 1.5 W |
最大脉冲漏极电流 (IDM): | 21 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMDF2C03HDR1 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 30V, 0.09ohm, 2-Element, N-Channel and P-Channel, |
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MMDF2C03HDR2 | ONSEMI |
获取价格 |
Power MOSFET 2 Amps, 30 Volts Complementary SO-8, Dual |
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MMDF2C03HDR2 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 30V, 0.09ohm, 2-Element, N-Channel and P-Channel, |
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MMDF2C03HDR2G | ONSEMI |
获取价格 |
Power MOSFET 2 Amps, 30 Volts Complementary SO-8, Dual |
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MMDF2C05E | MOTOROLA |
获取价格 |
Transistor |
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MMDF2C05ER1 | MOTOROLA |
获取价格 |
2A, 50V, 0.3ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, CASE 751B-05, SO-16 |
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MMDF2C05ER2 | MOTOROLA |
获取价格 |
2A, 50V, 0.3ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, CASE 751B-05, SO-16 |
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MMDF2N02E | MOTOROLA |
获取价格 |
DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS |
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MMDF2N02E | ONSEMI |
获取价格 |
Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual |
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MMDF2N02ER1 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 2.2A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta |
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