生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code: | unknown | HTS代码: | 8541.29.00.95 |
风险等级: | 5.64 | 雪崩能效等级(Eas): | 800 mJ |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 2.2 A | 最大漏源导通电阻: | 0.1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 14 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 140 ns |
最大开启时间(吨): | 40 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMDF2N02ER2 | ONSEMI |
获取价格 |
Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual |
![]() |
MMDF2N02ER2 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 25V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta |
![]() |
MMDF2N02ER2G | ONSEMI |
获取价格 |
Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual |
![]() |
MMDF2N05ZR2 | MOTOROLA |
获取价格 |
DUAL TMOS POWER MOSFET 2.0 AMPERES 50 VOLTS |
![]() |
MMDF2N06V | MOTOROLA |
获取价格 |
DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS |
![]() |
MMDF2N06V1 | MOTOROLA |
获取价格 |
Small Signal Field-Effect Transistor, 3.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal |
![]() |
MMDF2N06V2 | MOTOROLA |
获取价格 |
3300mA, 60V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIATURE, CASE 751-05, SO-8 |
![]() |
MMDF2N06VL | MOTOROLA |
获取价格 |
DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS |
![]() |
MMDF2N06VLR1 | MOTOROLA |
获取价格 |
Small Signal Field-Effect Transistor, 2.5A I(D), 60V, 2-Element, N-Channel, Silicon, Metal |
![]() |
MMDF2N06VLR2 | MOTOROLA |
获取价格 |
2500mA, 60V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIATURE, CASE 751-05, SO-8 |
![]() |