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MMDF2P02HDR2 PDF预览

MMDF2P02HDR2

更新时间: 2024-11-18 05:49:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
8页 96K
描述
Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual

MMDF2P02HDR2 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SO-8针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.41Is Samacsys:N
其他特性:LOGIC LEVEL COMPATIBLE配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):3.3 A
最大漏极电流 (ID):3.3 A最大漏源导通电阻:0.16 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):232 pF
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn80Pb20)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MMDF2P02HDR2 数据手册

 浏览型号MMDF2P02HDR2的Datasheet PDF文件第2页浏览型号MMDF2P02HDR2的Datasheet PDF文件第3页浏览型号MMDF2P02HDR2的Datasheet PDF文件第4页浏览型号MMDF2P02HDR2的Datasheet PDF文件第5页浏览型号MMDF2P02HDR2的Datasheet PDF文件第6页浏览型号MMDF2P02HDR2的Datasheet PDF文件第7页 
MMDF2P02HD  
Preferred Device  
Power MOSFET  
2 Amps, 20 Volts  
P−Channel SO−8, Dual  
These miniature surface mount MOSFETs feature ultra low R  
DS(on)  
and true logic level performance. They are capable of withstanding  
high energy in the avalanche and commutation modes and the  
drain−to−source diode has a very low reverse recovery time.  
MiniMOSt devices are designed for use in low voltage, high speed  
switching applications where power efficiency is important. Typical  
applications are dc−dc converters, and power management in portable  
and battery powered products such as computers, printers, cellular and  
cordless phones. They can also be used for low voltage motor controls  
in mass storage products such as disk drives and tape drives. The  
avalanche energy is specified to eliminate the guesswork in designs  
where inductive loads are switched and offer additional safety margin  
against unexpected voltage transients.  
http://onsemi.com  
2 AMPERES, 20 VOLTS  
RDS(on) = 160 mW  
P−Channel  
D
G
Features  
Ultra Low R  
Provides Higher Efficiency and Extends Battery Life  
DS(on)  
S
Logic Level Gate Drive − Can Be Driven by Logic ICs  
Miniature SO−8 Surface Mount Package − Saves Board Space  
Diode Is Characterized for Use In Bridge Circuits  
Diode Exhibits High Speed, With Soft Recovery  
MARKING  
DIAGRAM  
8
1
SO−8, DUAL  
CASE 751  
STYLE 11  
D2P02  
AYWWG  
G
I  
Specified at Elevated Temperature  
DSS  
8
Avalanche Energy Specified  
Mounting Information for SO−8 Package Provided  
Pb−Free Package is Available  
1
D2P02 = Device Code  
MAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1)  
A
Y
= Assembly Location  
= Year  
= Work Week  
J
Rating  
Symbol  
Value  
20  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
WW  
G
Drain−to−Source Voltage  
V
DSS  
= Pb−Free Package  
Drain−to−Gate Voltage (R = 1.0 MW)  
V
DGR  
20  
(Note: Microdot may be in either location)  
GS  
Gate−to−Source Voltage − Continuous  
V
GS  
20  
PIN ASSIGNMENT  
Drain Current − Continuous @ T = 25°C  
I
3.3  
2.1  
20  
A
A
D
D
Drain Current − Continuous @ T = 100°C  
I
Drain Current − Single Pulse (t 10 ms)  
I
Apk  
W
Source−1  
Gate−1  
Drain−1  
Drain−1  
Drain−2  
p
DM  
1
2
3
4
8
7
6
5
Total Power Dissipation, T = 25°C (Note 2)  
P
2.0  
− 55 to 150  
324  
A
D
Operating and Storage Temperature Range  
T , T  
J
°C  
Source−2  
stg  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Gate−2  
Drain−2  
Energy − Starting T = 25°C (V = 20 Vdc,  
J
DD  
V
= 5.0 Vdc, I = 6.0 Apk,  
GS  
L
L = 18 mH, R = 25 W)  
G
ORDERING INFORMATION  
Thermal Resistance, Junction−to−Ambient  
(Note 2)  
R
62.5  
260  
°C/W  
°C  
q
JA  
Device  
Package  
Shipping  
MMDF2P02HDR2  
MMDF2P02HDR2G  
SO−8  
2500 Tape & Reel  
2500 Tape & Reel  
Maximum Lead Temperature for Soldering  
Purposes, 1/8from case for 10 seconds  
T
L
SO−8  
(Pb−Free)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
1. Negative sign for P−Channel device omitted for clarity.  
Preferred devices are recommended choices for future use  
2. Mounted on 2square FR4 board (1sq. 2 oz. Cu 0.06thick single sided) with  
and best overall value.  
one die operating, 10 sec. max.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 7  
MMDF2P02HD/D  
 

MMDF2P02HDR2 替代型号

型号 品牌 替代类型 描述 数据表
MMDF2P02HDR2G ONSEMI

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Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual
MMDF2P02HD ONSEMI

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