Datasheet > MMDF2P03HD

MMDF2P03HD

更新时间： 2024-09-09 12:05:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	236K
描述
Power MOSFET 2 Amps, 30 Volts PâChannel SOâ8, Dual

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MMDF2P03HD 数据手册

MMDF2P03HD

Preferred Device

Power MOSFET

2 Amps, 30 Volts

P−Channel SO−8, Dual

These miniature surface mount MOSFETs feature ultra low R

DS(on)

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain−to−source diode has a very low reverse recovery time.

MiniMOSt devices are designed for use in low voltage, high speed

switching applications where power efficiency is important. Typical

applications are dc−dc converters, and power management in portable

and battery powered products such as computers, printers, cellular and

cordless phones. They can also be used for low voltage motor controls

in mass storage products such as disk drives and tape drives. The

avalanche energy is specified to eliminate the guesswork in designs

where inductive loads are switched and offer additional safety margin

against unexpected voltage transients.

http://onsemi.com

2 AMPERES

30 VOLTS

_DS(on)= 200 mW

P−Channel

• Ultra Low R

Provides Higher Efficiency and Extends Battery

DS(on)

Life

• Logic Level Gate Drive − Can Be Driven by Logic ICs

• Miniature SO−8 Surface Mount Package − Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

MARKING

DIAGRAM

• I

Specified at Elevated Temperature

DSS

• Avalanche Energy Specified

• Mounting Information for SO−8 Package Provided

SO−8, Dual

CASE 751

STYLE 11

D2P03

LYWW

MAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1.)

Rating

Symbol Value

Unit

Vdc

Adc

Drain−to−Source Voltage

DSS

DGR

= Location Code

= Year

= Work Week

Drain−to−Gate Voltage (R = 1.0 MΩ)

Gate−to−Source Voltage − Continuous

± 20

Drain Current − Continuous @ T = 25°C

Drain Current − Continuous @ T = 100°C

Drain Current − Single Pulse (t ≤ 10 μs)

3.0

1.9

PIN ASSIGNMENT

Apk

Watts

°C

Total Power Dissipation @ T = 25°C (Note 2.)

2.0

Source−1

Gate−1

Drain−1

Drain−2

Operating and Storage Temperature Range

T , T

− 55

stg

to 150

Source−2

Single Pulse Drain−to−Source Avalanche

324

Gate−2

Drain−2

Energy − Starting T = 25°C

(V = 30 Vdc, V = 5.0 Vdc, Peak

Top View

I = 6.0 Apk, L = 18 mH, R = 25 Ω)

Thermal Resistance − Junction to Ambient

(Note 2.)

62.5

260

°C/W

°C

ORDERING INFORMATION

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

Device

Package

Shipping

2500 Tape & Reel

MMDF2P03HDR2

SO−8

1. Negative sign for P−Channel device omitted for clarity.

2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided)

with one die operating, 10 sec. max.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

August, 2006 − Rev. 8

MMDF2P03HD/D

12 3 4 5 6 7...10

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与MMDF2P03HD相关器件

型号	品牌	获取价格	描述	数据表
MMDF2P03HDR2	ONSEMI	获取价格	Power MOSFET 2 Amps, 30 Volts PâChannel SOâ
MMDF3200Z	MOTOROLA	获取价格	DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS
MMDF3207	MOTOROLA	获取价格	DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS
MMDF3207R2	MOTOROLA	获取价格	7800mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIATURE, CASE 751-06, SO-8
MMDF3304	MOTOROLA	获取价格	7300mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIATURE, CASE 751-06, SO-8
MMDF3304R2	MOTOROLA	获取价格	Small Signal Field-Effect Transistor, 7.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal
MMDF3C03HD	MOTOROLA	获取价格	COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS
MMDF3C03HDR2	MOTOROLA	获取价格	5A, 30V, 0.05ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8, SO-8
MMDF3C05	MOTOROLA	获取价格	Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET
MMDF3N02HD	ONSEMI	获取价格	Power MOSFET 3 Amps, 20 Volts N-Channel SO-, DuaL

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