生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 其他特性: | LOGIC LEVEL COMPATIBLE, AVALANCHE ENERGY RATED |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 7.3 A | 最大漏源导通电阻: | 0.025 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMDF3C03HD | MOTOROLA |
获取价格 |
COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS | |
MMDF3C03HDR2 | MOTOROLA |
获取价格 |
5A, 30V, 0.05ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8, SO-8 | |
MMDF3C05 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET | |
MMDF3N02HD | ONSEMI |
获取价格 |
Power MOSFET 3 Amps, 20 Volts N-Channel SO-, DuaL | |
MMDF3N02HD | MOTOROLA |
获取价格 |
DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS | |
MMDF3N02HDR1 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 20V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal | |
MMDF3N02HDR2 | ONSEMI |
获取价格 |
Power MOSFET 3 Amps, 20 Volts N-Channel SO-, DuaL | |
MMDF3N02HDR2 | MOTOROLA |
获取价格 |
TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR | |
MMDF3N02HDR2G | ONSEMI |
获取价格 |
Power MOSFET 20V 3A 90 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL | |
MMDF3N03HD | MOTOROLA |
获取价格 |
DUAL TMOS POWER MOSFET 4.1 AMPERES 30 VOLTS |