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MMDF2P03HDR2 PDF预览

MMDF2P03HDR2

更新时间： 2024-09-09 12:05:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
10页 236K
描述
Power MOSFET 2 Amps, 30 Volts P−Channel SO−8, Dual

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中文翻译

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MMDF2P03HDR2 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Obsolete零件包装代码：SOT
包装说明：MINIATURE, CASE 751-07, SOP-8针数：8
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.41
Is Samacsys：N其他特性：AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA LOW RESISTANCE
雪崩能效等级（Eas）：324 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：3 A
最大漏极电流 (ID)：3 A最大漏源导通电阻：0.2 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e0湿度敏感等级：1
元件数量：1端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：2 W最大脉冲漏极电流 (IDM)：15 A
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MMDF2P03HDR2 数据手册

 浏览型号MMDF2P03HDR2的Datasheet PDF文件第2页浏览型号MMDF2P03HDR2的Datasheet PDF文件第3页浏览型号MMDF2P03HDR2的Datasheet PDF文件第4页浏览型号MMDF2P03HDR2的Datasheet PDF文件第5页浏览型号MMDF2P03HDR2的Datasheet PDF文件第6页浏览型号MMDF2P03HDR2的Datasheet PDF文件第7页 
MMDF2P03HD  
Preferred Device  
Power MOSFET  
2 Amps, 30 Volts  
P−Channel SO−8, Dual  
These miniature surface mount MOSFETs feature ultra low R  
DS(on)  
and true logic level performance. They are capable of withstanding  
high energy in the avalanche and commutation modes and the  
drain−to−source diode has a very low reverse recovery time.  
MiniMOSt devices are designed for use in low voltage, high speed  
switching applications where power efficiency is important. Typical  
applications are dc−dc converters, and power management in portable  
and battery powered products such as computers, printers, cellular and  
cordless phones. They can also be used for low voltage motor controls  
in mass storage products such as disk drives and tape drives. The  
avalanche energy is specified to eliminate the guesswork in designs  
where inductive loads are switched and offer additional safety margin  
against unexpected voltage transients.  
http://onsemi.com  
2 AMPERES  
30 VOLTS  
DS(on) = 200 mW  
R
P−Channel  
D
• Ultra Low R  
Provides Higher Efficiency and Extends Battery  
DS(on)  
G
Life  
• Logic Level Gate Drive − Can Be Driven by Logic ICs  
• Miniature SO−8 Surface Mount Package − Saves Board Space  
• Diode Is Characterized for Use In Bridge Circuits  
• Diode Exhibits High Speed, With Soft Recovery  
S
MARKING  
DIAGRAM  
• I  
Specified at Elevated Temperature  
DSS  
• Avalanche Energy Specified  
• Mounting Information for SO−8 Package Provided  
SO−8, Dual  
CASE 751  
STYLE 11  
D2P03  
LYWW  
8
MAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1.)  
J
1
Rating  
Symbol Value  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Drain−to−Source Voltage  
V
30  
30  
DSS  
DGR  
L
Y
WW  
= Location Code  
= Year  
= Work Week  
Drain−to−Gate Voltage (R = 1.0 MΩ)  
V
GS  
Gate−to−Source Voltage − Continuous  
V
± 20  
GS  
Drain Current − Continuous @ T = 25°C  
Drain Current − Continuous @ T = 100°C  
Drain Current − Single Pulse (t ≤ 10 μs)  
I
I
3.0  
1.9  
15  
A
D
D
A
PIN ASSIGNMENT  
I
Apk  
Watts  
°C  
p
DM  
Total Power Dissipation @ T = 25°C (Note 2.)  
P
2.0  
C
D
Source−1  
Gate−1  
Drain−1  
Drain−1  
Drain−2  
1
2
3
4
8
7
6
5
Operating and Storage Temperature Range  
T , T  
− 55  
J
stg  
to 150  
Source−2  
Single Pulse Drain−to−Source Avalanche  
E
324  
mJ  
AS  
Gate−2  
Drain−2  
Energy − Starting T = 25°C  
J
(V = 30 Vdc, V = 5.0 Vdc, Peak  
Top View  
DD  
GS  
I = 6.0 Apk, L = 18 mH, R = 25 Ω)  
L
G
Thermal Resistance − Junction to Ambient  
(Note 2.)  
R
62.5  
260  
°C/W  
°C  
θ
JA  
ORDERING INFORMATION  
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10 seconds  
T
L
Device  
Package  
Shipping  
2500 Tape & Reel  
MMDF2P03HDR2  
SO−8  
1. Negative sign for P−Channel device omitted for clarity.  
2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided)  
with one die operating, 10 sec. max.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
August, 2006 − Rev. 8  
MMDF2P03HD/D  
1234567...10

中文翻译

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MMDF2P03HDR2 替代型号

型号 品牌 替代类型 描述 数据表
SI4435DY ONSEMI

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FDS6975 ONSEMI

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 双 P 沟道，逻辑电平，PowerTrench® MOSFET，-30V，-6A，32mΩ
FDS4935A ONSEMI

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 双 P 沟道，PowerTrench® MOSFET，- 30V，-7A，23mΩ

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