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MMDF3207 PDF预览

MMDF3207

更新时间： 2024-09-08 22:30:03
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号场效应晶体管开关光电二极管局域网
页数 文件大小 规格书
4页 88K
描述
DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS

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中文翻译

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MMDF3207 技术参数

生命周期：Obsolete零件包装代码：SOT
包装说明：SMALL OUTLINE, R-PDSO-G8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.84其他特性：LOGIC LEVEL COMPATIBLE, AVALANCHE ENERGY RATED
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (ID)：7.8 A最大漏源导通电阻：0.033 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：P-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MMDF3207 数据手册

 浏览型号MMDF3207的Datasheet PDF文件第2页浏览型号MMDF3207的Datasheet PDF文件第3页浏览型号MMDF3207的Datasheet PDF文件第4页 
Order this document  
by MMDF3207/D  
SEMICONDUCTOR TECHNICAL DATA  
Medium Power Surface Mount Products  
Motorola Preferred Device  
DUAL TMOS  
POWER MOSFET  
7.8 AMPERES  
20 VOLTS  
WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s  
latest MOSFET technology process to achieve the lowest possible on–resistance per silicon  
area. They are capable of withstanding high energy in the avalanche and commutation  
modes and the drain–to–source diode has a very low reverse recovery time. WaveFET  
devices are designed for use in low voltage, high speed switching applications where power  
efficiency is important. Typical applications are dc–dc converters, and power management  
in portable and battery powered products such as computers, printers, cellular and cordless  
phones. They can also be used for low voltage motor controls in mass storage products  
such as disk drives and tape drives. The avalanche energy is specified to eliminate the  
guesswork in designs where inductive loads are switched and offer additional safety margin  
against unexpected voltage transients.  
R
= 33 m  
DS(on)  
CASE 751–06, Style 13  
SO–8  
•
Ultra Low R Provides Higher Efficiency and  
DS(on)  
S
Extends Battery Life in Portable Applications  
Characterized Over a Wide Range of Power Ratings  
Logic Level Gate Drive — Can Be Driven by  
Logic ICs  
Diode Is Characterized for Use In Bridge Circuits  
Diode Exhibits High Speed, with Soft Recovery  
•
•
1
2
3
4
8
7
6
5
DRAIN 1  
DRAIN 1  
DRAIN 2  
DRAIN 2  
SOURCE 1  
GATE 1  
G
•
•
•
•
SOURCE 2  
GATE 2  
I
Specified at Elevated Temperature  
DSS  
Miniature SO–8 Surface Mount Package —  
Saves Board Space  
TOP VIEW  
D
DEVICE MARKING  
ORDERING INFORMATION  
Device  
MMDF3207R2  
Reel Size  
Tape Width  
Quantity  
2500 units  
D3207  
13″  
12 mm embossed tape  
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.  
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1997  
1234

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与MMDF3207相关器件

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MMDF3207R2 MOTOROLA

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 		7800mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIATURE, CASE 751-06, SO-8
MMDF3304 MOTOROLA

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 		7300mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIATURE, CASE 751-06, SO-8
MMDF3304R2 MOTOROLA

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 		Small Signal Field-Effect Transistor, 7.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal
MMDF3C03HD MOTOROLA

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 		COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS
MMDF3C03HDR2 MOTOROLA

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 		5A, 30V, 0.05ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8, SO-8
MMDF3C05 MOTOROLA

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 		Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET
MMDF3N02HD ONSEMI

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 		Power MOSFET 3 Amps, 20 Volts N-Channel SO-, DuaL
MMDF3N02HD MOTOROLA

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 		DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS
MMDF3N02HDR1 MOTOROLA

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 		Power Field-Effect Transistor, 3A I(D), 20V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal
MMDF3N02HDR2 ONSEMI

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 		Power MOSFET 3 Amps, 20 Volts N-Channel SO-, DuaL

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