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MMDF3N02HDR2 PDF预览

MMDF3N02HDR2

更新时间： 2024-09-14 03:35:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管开关脉冲光电二极管局域网
页数 文件大小 规格书
12页 127K
描述
Power MOSFET 3 Amps, 20 Volts N-Channel SO-, DuaL

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中文翻译

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MMDF3N02HDR2 技术参数

是否无铅：含铅生命周期：Obsolete
零件包装代码：SOT包装说明：CASE 751-07, SOP-8
针数：8Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：5.4Is Samacsys：N
其他特性：AVALANCHE RATED, LOGIC LEVEL COMPATIBLE雪崩能效等级（Eas）：405 mJ
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：3.8 A最大漏极电流 (ID)：3.8 A
最大漏源导通电阻：0.09 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
湿度敏感等级：1元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：240极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：2 W最大脉冲漏极电流 (IDM)：19 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MMDF3N02HDR2 数据手册

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MMDF3N02HD  
Preferred Device  
Power MOSFET  
3 Amps, 20 Volts  
N–Channel SO–8, Dual  
These miniature surface mount MOSFETs feature ultra low R  
DS(on)  
and true logic level performance. They are capable of withstanding  
high energy in the avalanche and commutation modes and the  
drain–to–source diode has a very low reverse recovery time.  
MiniMOSt devices are designed for use in low voltage, high speed  
switching applications where power efficiency is important. Typical  
applications are dc–dc converters, and power management in portable  
and battery powered products such as computers, printers, cellular and  
cordless phones. They can also be used for low voltage motor controls  
in mass storage products such as disk drives and tape drives. The  
avalanche energy is specified to eliminate the guesswork in designs  
where inductive loads are switched and offer additional safety margin  
against unexpected voltage transients.  
http://onsemi.com  
3 AMPERES  
20 VOLTS  
R
= 90 mW  
DS(on)  
N–Channel  
D
• Ultra Low R  
Provides Higher Efficiency and Extends Battery  
DS(on)  
G
Life  
• Logic Level Gate Drive – Can Be Driven by Logic ICs  
• Miniature SO–8 Surface Mount Package – Saves Board Space  
• Diode Is Characterized for Use In Bridge Circuits  
• Diode Exhibits High Speed, With Soft Recovery  
S
MARKING  
DIAGRAM  
• I  
Specified at Elevated Temperature  
DSS  
• Avalanche Energy Specified  
• Mounting Information for SO–8 Package Provided  
SO–8, Dual  
CASE 751  
STYLE 11  
D3N02  
LYWW  
8
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
1
Rating  
Drain–to–Source Voltage  
Drain–to–Gate Voltage (R  
Symbol  
Value  
20  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
DSS  
L
Y
= Location Code  
= Year  
= 1.0 MΩ)  
V
DGR  
20  
GS  
WW  
= Work Week  
Gate–to–Source Voltage – Continuous  
Drain Current – Continuous @ T = 25°C  
V
± 20  
GS  
I
I
3.8  
2.6  
19  
A
D
D
Drain Current – Continuous @ T = 100°C  
A
PIN ASSIGNMENT  
Drain Current – Single Pulse (t ≤ 10 µs)  
I
Apk  
p
DM  
Total Power Dissipation @ T = 25°C  
(Note 1.)  
P
2.0  
Watts  
A
D
Source–1  
Gate–1  
Drain–1  
Drain–1  
Drain–2  
1
2
3
4
8
7
6
5
Operating and Storage Temperature Range  
T , T  
J stg  
– 55 to  
150  
°C  
Source–2  
Gate–2  
Drain–2  
Single Pulse Drain–to–Source Avalanche  
E
AS  
405  
mJ  
Top View  
Energy – Starting T = 25°C  
J
(V  
= 20 Vdc, V  
= 5.0 Vdc, Peak  
DD  
GS  
= 9.0 Apk, L = 10 mH, R = 25 Ω)  
I
L
G
ORDERING INFORMATION  
Thermal Resistance – Junction to Ambient  
(Note 1.)  
R
62.5  
260  
°C/W  
°C  
θJA  
Device  
Package  
Shipping  
2500 Tape & Reel  
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10 seconds  
T
L
MMDF3N02HDR2  
SO–8  
1. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with  
one die operating, 10 sec. max.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2000 – Rev. 6  
MMDF3N02HD/D  
1234567...12

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