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MMDF3200Z PDF预览

MMDF3200Z

更新时间： 2024-11-17 22:30:03
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
4页 90K
描述
DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS

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中文翻译

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MMDF3200Z 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.92
Is Samacsys：N配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (ID)：7.1 A
最大漏源导通电阻：0.015 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：2 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MMDF3200Z 数据手册

 浏览型号MMDF3200Z的Datasheet PDF文件第2页浏览型号MMDF3200Z的Datasheet PDF文件第3页浏览型号MMDF3200Z的Datasheet PDF文件第4页 
Order this document  
by MMDF3200Z/D  
SEMICONDUCTOR TECHNICAL DATA  
Medium Power Surface Mount Products  
Motorola Preferred Device  
DUAL TMOS  
POWER MOSFET  
11.5 AMPERES  
20 VOLTS  
WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s  
latest MOSFET technology process to achieve the lowest possible on–resistance per silicon  
area. They are capable of withstanding high energy in the avalanche and commutation  
modes and the drain–to–source diode has a very low reverse recovery time. WaveFET  
devices are designed for use in low voltage, high speed switching applications where power  
efficiency is important. Typical applications are dc–dc converters, and power management  
in portable and battery powered products such as computers, printers, cellular and cordless  
phones. They can also be used for low voltage motor controls in mass storage products  
such as disk drives and tape drives. The avalanche energy is specified to eliminate the  
guesswork in designs where inductive loads are switched and offer additional safety margin  
against unexpected voltage transients.  
R
= 0.015 OHM  
DS(on)  
CASE 751–06, Style 11  
SO–8  
•
•
•
•
•
Zener Protected Gates Provide Electrostatic  
Discharge Protection  
Designed to withstand 200 V Machine Model  
and 2000 V Human Body Model  
8
7
N1–DRAIN  
1
2
3
4
8
7
6
5
N1–Drain  
N1–Drain  
N2–Drain  
N2–Drain  
N1–Source  
N1–Gate  
Low R  
Extends Battery Life  
Provides Higher Efficiency and  
DS(on)  
N1–GATE  
2
Logic Level Gate Drive — Can Be Driven by  
Logic ICs  
Miniature SO–8 Surface Mount Package —  
Saves Board Space  
Diode Is Characterized for Use In Bridge Circuits  
Diode Exhibits High Speed, With Soft Recovery  
N2–Source  
N2–Gate  
1
TOP VIEW  
N1–SOURCE  
•
•
•
•
6
5
N2–DRAIN  
I
Specified at Elevated Temperature  
DSS  
Mounting Information for SO–8 Package Provided  
N2–GATE  
4
3
N2–SOURCE  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Max  
20  
Unit  
V
Drain–to–Source Voltage  
V
DSS  
Drain–to–Gate Voltage (R  
GS  
= 1.0 MΩ)  
V
DGR  
20  
V
Gate–to–Source Voltage — Continuous  
Operating and Storage Temperature Range  
V
± 12  
V
GS  
T , T  
J
– 55 to 150  
°C  
stg  
DEVICE MARKING  
ORDERING INFORMATION  
Device  
MMDF3200Z  
Reel Size  
Tape Width  
Quantity  
4000 units  
D3200  
13″  
12 mm embossed tape  
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.  
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1997  
1234

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